Allicdata Part #: | BFR182WH6327XTSA1TR-ND |
Manufacturer Part#: |
BFR182WH6327XTSA1 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 12V 35MA SOT323 |
More Detail: | RF Transistor NPN 12V 35mA 8GHz 250mW Surface Moun... |
DataSheet: | BFR182WH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04304 |
6000 +: | $ 0.03742 |
15000 +: | $ 0.03181 |
30000 +: | $ 0.02994 |
75000 +: | $ 0.02807 |
150000 +: | $ 0.02432 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz |
Gain: | 19dB |
Power - Max: | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 8V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BFR182 |
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The BFR182WH6327XTSA1 is a high-performance RF bipolar transistors manufactured by NXP Semiconductors. It can be used for a variety of applications, such as sound amplifiers, GPS receivers and radio transmitters. This article will discuss the application fields and working principles of the BFR182WH6327XTSA1.
The BFR182WH6327XTSA1 has a wide range of applications in the radio frequency (RF) domain. It can be used for applications such as amplifying the received signals from a GPS receiver or for radio transmission. It can also be used as an amplifier of sound signals in audio-related applications such as speakers, headsets, and audio players. It is also capable of operation in low noise and high gain linearity.
The BFR182WH6327XTSA1 is a bipolar junction transistor (BJT), which means it is composed of two p-n junctions that control the flow of current. The junction between the two junctions is called a "base". In a BJT, current flows from the emitter to the collector when a small current is applied to the base. Depending on the level of current flowing through the base, the BJT will either be in cut-off mode, saturation mode, or linear active mode.
In the case of the BFR182WH6327XTSA1, the transistor is used mainly in active linear mode. This mode is where the BJT is running the most efficiently, allowing for the best performance. When operating in this mode, the base-emitter voltage is low, which reduces power loss and minimizes noise. Additionally, this transistor has a high gain linearity, meaning it can amplify the input signals with minimal distortion. This makes it well suited for RF receiver applications.
In summary, the BFR182WH6327XTSA1 is a high-performance RF bipolar transistor. It is mainly used for applications related to GPS receivers, audio amplifiers, and radio transmitters, as it offers excellent performance in linear mode with low noise and high gain linearity. It is composed of two p-n junctions with a base in between, allowing for current to flow from the emitter to the collector when a small current is applied to the base. It makes an excellent choice for applications requiring high speed operation, power efficiency and signal fidelity.
The specific data is subject to PDF, and the above content is for reference
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