BFT92W,115

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BFT92W is a Bipolar, Fast Switch NPN transistor ideal for use in radio frequency (RF) applications. It is capable of rapid switching and is suitable for power amplification and switching operations in low-noise amplifiers, pre-drivers and driver circuits, and different stages of radio receivers, television and radar systems.

The BFT92W is part of the Bipolar Family of transistors and consists of a Base, Collector and Emitter. It has an operating frequency of up to 300MHz, a maximum collector current of 1200mA, and a maximum power dissipation of 1.5W. It also has good input and output isolation performance, as well as excellent noise suppression characteristics.

The BFT92W has a collector-emitter voltage of 115V, a BVceo rating of 50V and a collector-base voltage of 50V, with a BVCBO rating of 150V. It has a very low turn-on and turn-off time, which is convenient for applications that require fast switching, such as amplifier circuits, oscillator circuits, and antenna switching circuits. It also has low-power consumption and a low noise temperature coefficient, making it an ideal choice for low-noise pre-drivers and driver circuits.

The BFT92W has an incandescent cathode, a PNP emitter, and an NPN collector. An N-type semiconductor substrate is used, which has a higher threshold voltage than the one used in regular PNP transistors. This allows the transistor to have better performance than other types of transistors in high-frequency applications.

The BFT92W is typically used in RF amplifiers, oscillators, and antenna switching circuits, where it is able to quickly and efficiently switch between off and on states. It is also often used in RF pre-drivers, drivers and intermediate stages of radio receivers, television and radar systems.

The working principle of the BFT92W is based on the bipolar junction transistor (BJT) architecture. BJTs are three-terminal semiconductor devices with two PN junctions. These junctions are formed by two doped regions of semiconductor materials connected by a thin metal base region. The base region forms a controllable electric junction between the two doped regions, which allows the BJT to act as a switch or an amplifier.

When the base of the BFT92W is positively biased, current will flow from the emitter to the collector. This current will increase with the increasing base voltage, and eventually the collector current will reach its maximum value. When the base voltage is decreased, the collector current will also decrease, and when it reaches zero, the transistor will be in its cut-off state. Furthermore, the BFT92W can also be used in its inverse active region, where the collector voltage is greater than the emitter voltage. In this region, the current will flow from collector to emitter.

In conclusion, the BFT92W is an extremely fast-switching transistor ideal for use in radio frequency applications. It has a very low turn-on and turn-off time, low power consumption, and good input and output isolation characteristics. Additionally, it has a high collector-emitter voltage of 115V, allowing it to be used in diverse types of applications.

The specific data is subject to PDF, and the above content is for reference