Allicdata Part #: | 568-1993-2-ND |
Manufacturer Part#: |
BFT93,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PNP 12V 5GHZ SOT-23 |
More Detail: | RF Transistor PNP 12V 35mA 5GHz 300mW Surface Moun... |
DataSheet: | BFT93,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 5GHz |
Noise Figure (dB Typ @ f): | 2.4dB @ 500MHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 30mA, 5V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BFT93 |
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BFT93,215 Application Field and Working Principle
The BFT93,215 belongs to a category of transistors known as Bipolar Junction Transistors (BJT). These types of transistors are most commonly used in RF applications. RF technicians use BJTs in a variety of applications such as radio transceivers, frequency generation, and amplifying signals.
BJTs consist of three terminals: emitter, base and collector. They operate by controlling the flow of electrons between the emitter and collector terminals. As the base voltage is increased, the number of electrons passing from the emitter to the collector also increases. This relationship between the base and collector allows BJTs to act as switches or amplifiers, depending on their application.
Specifically, the BFT93,215 BJT is used in a wide range of RF applications such as radio transceivers, frequency generation and amplification circuits. It is especially suitable for use in microwave systems due to its ability to operate at high frequencies up to 1GHz. It is also known for its excellent linearity, making it a great choice for linear amplifier circuits.
In addition to its RF advantages, the BFT93,215 provides a number of desirable features that make it an attractive option for most applications. Its maximum collector-emitter voltage of 25 volts make it an ideal choice for applications that require higher voltages. Additionally, with a DC current gain (hFE) of 100, it has good current gain and can thus be used for circuits that require more current. It also has a maximum collector dissipation of 470mW, which makes it suitable for power applications.
The working principle for the BFT93,215 is fairly simple. When the base voltage is increased, electrons are injected from the emitter terminal into the base region. These electrons then flow from the base to the collector, allowing current to pass through the device. This change in current allows the BJT to act as a switch, allowing either an on or off signal to pass through the device depending on its base voltage.
With its high frequency abilities, excellent linearity and wide range of desirable features, the BFT93,215 makes an excellent choice for most RF applications. It can be used as both a switch and an amplifier, depending on the application, and its wide voltage and current ratings make it highly versatile. When choosing the right transistor for your application, the BFT93,215 is an excellent option.
The specific data is subject to PDF, and the above content is for reference
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