BFT93W,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	4GHz
Noise Figure (dB Typ @ f):	2.4dB ~ 3dB @ 500MHz ~ 1GHz
Gain:	--
Power - Max:	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 30mA, 5V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Base Part Number:	BFT93

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Introduction

The BF-T93W/115 is a NPN silicon RF transistor developed by 2SC series. Designed specifically to satisfy the needs of RF and microwave amplification, the device features very wide-band operation, minimum drift, and high gain performance. A wide variety of applications can be found in radio links, portable radio, base station amplifiers, TV tuners, amplifiers, and other high frequency equipment.

Features and Benefits

The BF-T93W/115 offers many features and benefits that make it an ideal choice for RF and microwave applications. These include: • High gain: Up to 17dB• Low noise: A low noise figure of 1.7dB at 10GHz, and low noise factor of 3.4dB at 8GHz• Wide-band performance: Operates from 5GHz to 11GHz• Linearity: Low distortion levels of 0.1%• Low input power: An input power of only 6.5dBm• High speed: A switching speed of 40ns• Robustness: Excellent 16V breakdown voltage

Application fields

The BF-T93W/115 is an ideal choice for a variety of RF and microwave applications. It is particularly suitable for radio links, portable radio, base station amplifiers, TV tuners, and amplifiers. The device can also be used in a wide range of other high frequency applications such as cellular wireless networks and WiFi. The BF-T93W/115 is suitable for use in circuits of high linearity, providing excellent performance in modulation and demodulation, as well as in high frequency amplification applications. The device’s low noise figure and wide-band performance make it an excellent choice for applications such as receivers, transmitters and transceivers.In addition, the BF-T93W/115 is also suitable for low-noise amplifiers as its low noise figure ensures that low power signals are not distorted. This makes the device ideal for applications such as surveillance or tracking systems.

Working Principle

The BF-T93W/115 is a NPN silicon RF transistor. It is a type of bipolar junction transistor (BJT) which essentially consists of two PN junction diodes connected in series and opposed in direction. By adjusting the bias current to the transistor, the current conducted by the device through the emitter-base junction can be regulated. When a forward bias is applied, electron be flow from the emitter to the base forming a thin region between the two regions known as the base-emitter region. These electrons are then collected by the collector current, which is then regulated by the external bias current. As the current passing through the base-collector junction is regulated, the current provided to the device’s output is controlled, thus allowing the device to amplify external signals.

Conclusion

The BF-T93W/115 is a NPN silicon RF transistor developed by 2SC series. The device features very wide-band operation and high gain performance, making it ideal for radio links, portable radio, base station amplifiers, TV tuners, amplifiers, and other high frequency equipment. The device also features low noise, low input power and high speed operation, while also offering robustness with its 16V breakdown voltage. The BF-T93W/115 is a type of bipolar junction transistor, which works by controlling the current passing through its base-collector junction. This allows the device to amplify external signals, making it an ideal choice for modulation and demodulation and low-noise amplification applications.

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