BG3123E6327HTSA1

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The BG3123E6327HTSA1 is an N-channel enhancement-mode MOSFET transistor designed for radio-frequency applications. The device is designed such that it has low gate threshold voltage, fast switching speed, less input capacitance, low drain-source on-resistance, and low gate-charge to make it suitable for use in high frequency switching applications. This device is commonly used in radio-frequency power amplifiers, switching power supplies, and low noise block converters.

A MOSFET transistor works by providing a controlled field effect current path between the Gate and Drain leads when a potential difference is applied between the Gate and Source leads. When this voltage threshold is reached, the electric current flows from source to drain and vice versa. Upon the application of electric current to the gate terminal, the electric current is modulated and the device allows for electrical signals to pass from source to drain.

BG3123E6327HTSA1 is an enhanced MOSFET, which has low on-resistance between its Drain and Source leads. This makes the device excellent for use in radio-frequency applications due to its low power dissipation and excellent electrical characteristics. The operating frequency of the device ranges from 100MHz to 2GHz, which makes it suitable for use in high-frequency applications. This MOSFET also offers a higher breakdown voltage and is capable of withstanding a reverse voltage of 25 V.

Additionally, the BG3123E6327HTSA1 has a gate threshold voltage of 1.5 V. This means that the device is able to turn-on or off at lower voltages, making it suitable for use in low voltage applications. The device also offers a Ciss capacitance of 2.5 pF. This is important as it reduces the amount of power consumed during operation, thereby increasing efficiency. The total gate charge of the device is 5 nC, which further reduces the power losses.

The BG3123E6327HTSA1 is an excellent choice for use in radio-frequency applications. It offers excellent electrical characteristics that makes it suited for use in RF power amplifiers, switching power supplies, and low noise block converters. It has excellent switching speed, low power dissipation, and low gate charge that make it a great choice for use in high-frequency applications.

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