BG3123RE6327HTSA1

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The BG3123RE6327HTSA1 is a silicon monolithic integrated circuit RF power transistor designed for cellular base stations, constructed with advanced processing technologies. It has a drain-source breakdown voltage of 62 volts and power dissipation of 57.2 watts.

As a FET (Field Effect Transistor) device, the BG3123RE6327HTSA1 is operated through the application of an electric field between two gate electrodes separated from each other. This electric field controls the orientation of the electrons within the transistor and allows for the switching action of current flow depending on the voltage and electric field applied to the gates.

The BG3123RE6327HTSA1 is a RF (Radio Frequency) power transistor with a frequency range of up to 2000MHz, making it an ideal candidate for use in cellular base stations and other RF applications. It is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device, which means the gate electrodes are ceramic insulated and the gate voltage is used to control the current flow. As with other MOSFET, the BG3123RE6327HTSA1 can operate with both N-channel and P-channel types.

The power gain of the BG3123RE6327HTSA1 is typically 37dB at 1.8GHz and 40dB at 900MHz, with a typical noise figure of 4.6 dB. The device is capable of producing an output power of 63dBm at 1.8GHz and 48dBm at 900MHz. The on-resistance is typically 3.2 ohms and 5 ohms for the N and P channel devices, respectively.

In terms of its application field, the BG3123RE6327HTSA1 is particularly suitable for use in high power applications in cellular base station such as amplifiers, switches and power supplies. The device is designed to withstand a wide range of temperatures, from -55°C up to 135°C, and is supplied in a hermetically sealed package for better environmental protection and extended life.

In summary, the BG3123RE6327HTSA1 is a silicon monolithic integrated circuit RF power transistor specifically designed for cellular base station applications. It is a MOSFET device that operates with an electric field between two gate electrodes and is capable of producing an impressive output power of 63dBm and 37dB power gain. The device has excellent thermal stability and is supplied in a hermetically sealed package for better environmental protection. The device can be used in a variety of high power applications such as amplifiers, switches and power supplies.

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