BLA1011-10,112 Allicdata Electronics
Allicdata Part #:

BLA1011-10,112-ND

Manufacturer Part#:

BLA1011-10,112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 75V 15DB SOT467C
More Detail: RF Mosfet LDMOS 36V 50mA 1.03GHz ~ 1.09GHz 15dB 10...
DataSheet: BLA1011-10,112 datasheetBLA1011-10,112 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.03GHz ~ 1.09GHz
Gain: 15dB
Voltage - Test: 36V
Current Rating: 2.2A
Noise Figure: --
Current - Test: 50mA
Power - Output: 10W
Voltage - Rated: 75V
Package / Case: SOT467C
Supplier Device Package: SOT467C
Base Part Number: BLA1011
Description

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BLA1011-10,112 is a type of radio frequency (RF) field-effect transistors (FETs) and metal oxide semiconductor field-effect transistors (MOSFETs). They are widely used in a variety of radio applications, such as transmitters, receivers and amplifiers. Here, we discuss the applications and working principles of this FET and MOSFET.ApplicationsThe BLA1011-10,112 FET and MOSFET can provide high isolation and low-noise performance. As such, they are often used in radio transmitters, receivers, and amplifiers. For example, they can be used to build the LNA (Low Noise Amplifier) in the receiver, which increases the sensitivity of the receiver by increasing its signal-to-noise ratio. They can also be used as a high-isolation switch, providing high isolation between the input and output, making it ideal for switching antenna applications. In addition, the BLA1011-10,112 FET and MOSFET have a low power consumption, making them an ideal choice for use in low-power applications. They are particularly useful in applications where high efficiency and low power consumption are important, such as in the manufacture of radio transmitters and receivers.Working PrincipleThe BLA1011-10,112 FET and MOSFET work in a similar way to other FETs and MOSFETs. They use a gate voltage to control the flow of current between the source and the drain. The gate voltage creates an electric field that attracts electrons from the source to the drain, creating a channel of electrons between them. This channel is controlled by the gate voltage, which determines the number of electrons that are allowed to flow through the channel. As the gate voltage increases, more electrons will be allowed to flow, and the current flowing through the channel increases. The channel also acts as an impedance, meaning the current will be attenuated depending on how much impedance the channel has. The other main component of the BLA1011-10,112 is the gate capacitance, which is the amount of charge that can be stored on the gate. This capacitance helps to determine the frequency response of the device by affecting the impedance at various frequencies. Overall, the BLA1011-10,112 FET and MOSFET are useful in a variety of radio applications, providing high isolation, low noise performance and low power consumption. They can be used in transmitters, receivers, and amplifiers to achieve a better signal-to-noise ratio, and can be used as a high-isolation switch for antenna switching applications. In addition, they also have a gate capacitance which affects the frequency response, making them a great choice for low-power applications.

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