BLA1011-200,112

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	1.03GHz ~ 1.09GHz
Gain:	13dB
Voltage - Test:	36V
Current Rating:	--
Noise Figure:	--
Current - Test:	150mA
Power - Output:	200W
Voltage - Rated:	75V
Package / Case:	SOT-502A
Supplier Device Package:	LDMOST
Base Part Number:	BLA1011

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BLA1011-200,112 application field and working principle

The BLA1011-200,112 is a RF (radio frequency) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Despite it being only a low-power transistor, the BLA1011-200,112 is designed for a variety of different applications in the RF range, particularly mixing and switching functions.A MOSFET is an electronic device that is used to control electrical current. It is constructed of a metal oxide semiconductor material and functions similar to a transistor. A MOSFET can be used as a switch, amplifier, rectifier, or any combination of these. The MOSFET is one of the most widely used RF devices, due in part to its low power requirements and reliability.The BLA1011-200,112 is a N-channel type that has a drain-source resistance of 200 ohms and operates at a maximum voltage of 15 volts. The maximum drain current is 1.2 amps. This device is ideal for use in RF systems requiring high-speed switching capabilities, such as in satellite communications, mobile phones, and other wireless systems. Additionally, the low power requirements enable it to be used in low-power applications such as radio receivers.The BLA1011-200,112 is designed to operate at both high and low frequencies, and is capable of switching signals within its range of 15 volts. The device works on the principle that electrons travel through a semiconductor material due to an applied voltage. The device consists of two layers of semiconductor material, one made of silicon and the other of aluminum. The aluminum layer is called the drain, while the silicon layer is called the source. When the voltage is applied to the device, the electrons from the source are attracted to the drain. When the voltage is removed, the electrons return to the source.The MOSFET works most efficiently when used to switch signals at high frequencies. Also, the device\'s design allows for a much higher switching speed than other types of transistors, which makes it ideal for use in high-frequency applications.The BLA1011-200,112 is a cost-effective solution for switching signals in the RF range, and is particularly well-suited for high-power applications. The device has excellent thermal performance, which helps to ensure reliable operation in both temperature extremes and high humidity environments. With its ability to switch signals at both high and low frequencies, the BLA1011-200,112 is a versatile and reliable solution for many RF applications.

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