Allicdata Part #: | BLC6G27-100,112-ND |
Manufacturer Part#: |
BLC6G27-100,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET 28V SOT895A |
More Detail: | RF Mosfet 14W SOT-895A |
DataSheet: | BLC6G27-100,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | -- |
Frequency: | -- |
Gain: | -- |
Current Rating: | -- |
Noise Figure: | -- |
Power - Output: | 14W |
Voltage - Rated: | 28V |
Package / Case: | SOT-895A |
Supplier Device Package: | SOT-895A |
Base Part Number: | BLC6G27 |
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There is a unique RF transistor being used in a variety of applications, known as BLC6G27-100,112. These transistors are Field Effect Transistors (FETs), which are among the most basic types of transistors available today. These have been used in many applications, such as switching, amplifying, and even in RF (radio frequency) operations. This article will discuss the application field and working principle of BLC6G27-100,112.
BLC6G27-100,112 is part of an RF transistor family of FETs that are designed to operate in the high frequency range. They are able to deliver high performance from a single FET, while also providing low noise, low power consumption and high switching speeds. As part of the RF transistor category, BLC6G27-100,112 devices have been specifically designed to work at frequencie ranging between 37.5MHz and 1GHz.
One of the most common applications for BLC6G27-100,112 is in radio frequency circuits. These transistors can be used to create a two-way radio system, or be used in a variety of other receiver and transmitter applications. The FETs can also be used in microwave-like applications, where the RF signals are typically too high for ordinary semiconductors to handle. As this FET is able to provide high performance with low noise, these types of application require specific design of the device.
In terms of its working principle, these FETs are capable of being operated in both a depletion and an enhancement mode. In the depletion mode, the FET will allow the current to pass through the device by default, and no bias is applied. On the other hand, when the enhancement mode is used, the FET becomes like a switch, where the current is blocked unless the voltage bias is applied.
When these transistors are used in radiofrequency circuits, it is important to understand the basics of the working principle and application of the devices. For example, in a radio receiver application, the FET is used to amplify the incoming signal so that it can be detected by the receiver. The FET then needs to amplify the signal without adding any noise or undesired signals and it should be able to perform this task consistently.
The BLC6G27-100,112 is considered to be one of the most reliable FETs for high frequency applications. They are designed to operate in a variety of conditions, including different temperature and voltage ranges. As such, these FETs are well suited for RF, microwave, and other high frequency applications. With its low noise, low power consumption and high switching speeds, the BLC6G27-100,112 is an ideal component for radio frequency circuits.
The specific data is subject to PDF, and the above content is for reference
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