BLC6G27-100,118

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The BLC6G27-100,118 is a high-performance transistor designed for use in RF power amplifiers and transmitters for cellular base-station applications. The device utilizes a N-Channel Lateral Double-Diffused Metal Oxide Semiconductor (LDMOS) technology and is fabricated with a silicon-on-sapphire process.

As a lateral power amplifier, the BLC6G27-100,118 is capable of delivering high output power with greater than 12dB gain and 38 mindbd gain flatness at a supply voltage of 28V and a current draw of 110mA. It is rated for a maximum output power of 5W and a central frequency of 2.1GHz. The device is rated for operating temperatures up to 200C and has a maximum drain-source breakdown voltage of 37V.

The BLC6G27-100,118 is designed for use in a range of applications such as cellular base-station transmitters and high-power amplifiers. It is suitable for use in mobiles, satellite communications, and radar systems, as well as other applications which require high-power output, such as outdoor-base-station transmitters. The device is also used in applications where its high gain and gain flatness are beneficial. This includes radar systems, satellite communications, and other high-power systems.

The working principle of the BLC6G27-100,118 is based on the LDMOS technology. This technology uses a wide-bandgap semiconductor material which is designed to increase the power available from the device. The structure of the device consists of a silicon substrate which is overlaid with a dielectric oxide (such as a silicon dioxide). This substrate is then combined with n-type and p-type dopants which form the transistor channel. When an electrical field is applied across the device, it creates an inversion layer within the channel that is the key to the transistor\'s operation. The inversion layer allows for the device to be used as a switch and also provides the transistor with its high gain and gain flatness.

The BLC6G27-100,118 is a high-performance device which is designed for use in a wide range of RF applications. It is capable of delivering high output power with greater than 12dB gain and 38 mindbd gain flatness. The device is based on an LDMOS technology which provides enhanced power output and greater gain. The device is rated for operating temperatures up to 200C and is suitable for use in mobiles, satellite communications, and radar systems. The working principle of the BLC6G27-100,118 is based on the LDMOS technology and its structure consists of a silicon substrate which is overlaid with a dielectric oxide and incorporates n-type and p-type dopants which form the transistor channel.

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