BLS2731-110,114

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	75V
Frequency - Transition:	3.1GHz
Noise Figure (dB Typ @ f):	--
Gain:	7dB
Power - Max:	500W
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 3A, 5V
Current - Collector (Ic) (Max):	12A
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SOT-423A
Supplier Device Package:	CDFM2
Base Part Number:	BLS2731

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

BLS2731-110 is a high voltage NPN type transistor for use in indoor or outdoor applications such as dimming and switching. This type of transistor is commonly used in power line switching, RF switch, high frequency amplifier and audio amplifier applications. BLS2731-110 has an outstanding feature of low self-heating, high breakdown voltage, low saturation voltage and high current gain. The BLS2731-110 can be used as an RF switch, high frequency amplifier, audio amplifier, mixer and high voltage switching.

Application Field

BLS2731-110 is used in a wide variety of applications due to its high current gain and low saturation voltage. Its major applications include coil-less dimmer switches, LED lighting, Satellite TV switches, Wireless communication devices, broadband remote switch, high voltage amplifier, and audio amplifiers. BLS2731-110 makes an excellent choice for various switch applications where switching frequency is high. This transistor can be used to switch large currents in air conditioning devices, industrial machines, electric motors, power supplies and other equipment. In wireless communication devices, BLS2731-110 is often used as a mixer to mix signals transmitting a radio frequency.

Working Principle

BLS2731-110 transistors are based on bipolar junction transistors (BJT) technology. BJT consist of two diodes back-to-back, connected in a loose and parallel fashion. The base-emitter junction is forward-biased and creates a region of highly conductive material that allows current to flow between the base and emitter. This current is amplified when it reaches the collector.As the base current increases, the voltage difference across the collector and emitter increases. This causes an increase in collector current and also amplifies the current. The collector current has a proportionate increase with base current and so this is known as an amplifier.BLS2731-110 transistors have a high current gain due to the tight type of connection. The current gain of a transistor is very important for RF applications as it indicates the amplification of high-frequency signals.

Conclusion

BLS2731-110 is a high voltage NPN type transistor for use in indoor or outdoor applications such as dimming and switching. It has an outstanding feature of low self-heating, high breakdown voltage, low saturation voltage and high current gain. This type of transistor is commonly used in RF switch, high frequency amplifier and audio amplifier applications. BLS2731-110 is used in a wide variety of applications due to its high current gain and low saturation voltage. BLS2731-110 transistors are based on bipolar junction transistors (BJT) technology. Its major applications include coil-less dimmer switches, LED lighting, Satellite TV switches, Wireless communication devices, broadband remote switch, high voltage amplifier, and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description