BLS2731-50,114

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Transistors - Bipolar (BJT) - RF

The BLS2731-50,114 is an epitaxial silicon NPN transistor in a hermetically sealed metal-surface mountable package. It is designed and optimized for RF amplification, oscillator and driver applications. It is focused on use in cellular and two-way radios.

Specifications

The BLS2731-50,114 is available related both in amplifier and oscillator applications. The device has a Pout/Gmax of 25dBm, a rdson of 0.7 ohms and a Ft(60dB gain) of 4GHz. Moreover, it features a high breakdown voltage of 15V, a reverse transfer capacitance (Cc) of 0.6pF and a power supply voltage of 4V. The maximum junction temperature is 175°C.

Application Fields

The BLS2731-50,114 is specifically designed for RF amplification and oscillator applications. Its main application field is cellular and two-way radios, which are characterized by the need of excellent linearity performance. In particular, it is meant to be used in wireless communication base station and other related systems, or specialized 5GHz antennas.

Working Principle

The working principle of the BLS2731-50,114 relies on the current gain stabilization circuit and the low-noise HBT process. The stabilization circuit keeps the current gain constant and also eliminates power increases that results from process variations. Moreover, the HBT process combines the desirable attributes of NMOS and PMOS processes. This results in high-performance, low-noise performance, a low parasitic capacitance, a small die size and low power consumption.

The transistor also has a low-distortion mode of operation which further enhances the linearity performance. It is also characterized by an ultralow noise characteristics of only −141dBm/Hz at 1GHz output. Moreover, it has a high-power OIP3 of +50dBm and a low-power OIP3 of +42dBm. The transistor’s excellent linearity, low noise, and efficient driver performance make it well suited for use in cellular and two-way radio systems.

Conclusion

The BLS2731-50,114 is an epitaxial silicon NPN transistor designed for use in RF amplification applications including cellular and two-way radios. It features a Pout/Gmax of 25dBm, a rdson of 0.7 ohms, a Ft(60dB gain) of 4GHz, a high breakdown voltage of 15V and a reverse transfer capacitance (Cc) of 0.6pF. Its excellent linearity, low noise and efficient driver performance make it well suited for use in cellular and two-way radio systems.

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