Allicdata Part #: | BLS2933-100,112-ND |
Manufacturer Part#: |
BLS2933-100,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 8DB SOT502A |
More Detail: | RF Mosfet LDMOS 32V 20mA 2.9GHz ~ 3.3GHz 8dB 100W ... |
DataSheet: | BLS2933-100,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.9GHz ~ 3.3GHz |
Gain: | 8dB |
Voltage - Test: | 32V |
Current Rating: | 12A |
Noise Figure: | -- |
Current - Test: | 20mA |
Power - Output: | 100W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502A |
Supplier Device Package: | LDMOST |
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.The BLS2933-100,112 is a type of Field Effect Transistor (FET) used in radio frequency (RF) systems. This special FET device is designed for use in high performance and efficient RF power amplification or bias control in transmitters and receivers, making them an ideal choice for a wide array of purposes. This is further strengthened by a low Off-State capacitance and gate-source threshold voltage that results in high stability and fast switching time.
In terms of its application field, the BLS2933-100,112 can be used in a number of consumer and industrial applications. It is widely used in radiotelephony systems and radio broadcasting systems, of which it provides reliable and optimum performance. These transistors can also be found in precision electrical testing and controlling circuits like meters, indicators, relays, valves, and other components in use in process control and metering systems. It is also widely used in high frequency power amplifiers, RF processing circuits, and other RF communication systems.
Thanks to an optimized design detailing, the BLS2933-100,112 is virtually unmatched in terms of its ultra high frequency performance, providing excellent efficiency and gain. It also extends high frequency response into the ultra high frequency tail. The transistors are often used as switches to give lasting performance in applications such as satellite systems, TV, radio and remote controls.
This transistor utilizes the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure for efficient power amplification, thanks to the naturally high gain that comes with this kind of structure. With very low current and low voltage requirements, the BLS2933-100,112 provides superb stability and strength. Also, the minimal stability of the current transfer coefficient makes it suitable for use in switch and amplifier circuits with precision current control.
The maximum voltage rating of the BLS2933-100,112 is 25 V and the maximum current rating is 1 A. Depending on the chip size, the maximum power output ranges from 2-4 W. With its ultra-low On-State resistance, the transistor is able to provide a high driving capability with a low power consumption. Thanks to its fast switch time, there is minimal switching time distortion in signal detour.
The BLS2933-100,112 produces very little noise, further improving its performance. This reduces signal noise levels, increasing signal strength. Additionally, the maximum frequency of operation for this transistor exceeds 8 GHz, allowing for frequency tuning for high frequency applications like satellite systems.
The BLS2933-100,112 is an efficient transistor that can be used in a number of applications, offering reliable and high performance in RF systems. It is ideal for use in radio broadcast systems, radiotelephony systems, TV systems, satellite systems and more.
The specific data is subject to PDF, and the above content is for reference
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