Allicdata Part #: | BLS2731-10,114-ND |
Manufacturer Part#: |
BLS2731-10,114 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANSISTOR RF POWER SOT445C |
More Detail: | RF Transistor NPN 75V 1.5A 3.1GHz 145W Surface Mou... |
DataSheet: | BLS2731-10,114 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 75V |
Frequency - Transition: | 3.1GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 10dB |
Power - Max: | 145W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 250mA, 5V |
Current - Collector (Ic) (Max): | 1.5A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-445C |
Supplier Device Package: | CDFM2 |
Base Part Number: | BLS2731 |
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BLS2731-10,114 Application Field and Working Principle
BLS2731-10,114 is a type of RF transistor, specifically part of a family of Bipolar junction transistors (BJTs). They are used when applying RF signal amplification and switching operations in various electronic systems. This devices represents a wide application field for broad usage for the projects related to the applications in audio, computer, communication and industrial fields.
Working Principle:
In principal, BJT consists of three tissues - emitter, base, and collector - connected in a semiconductor network. It is the action of the base that provides the crucial working within BJT, as it is closely surrounded by electrons and holes from the other tissues. In RBJT (ΩBJT), this region also includes a resistance layer, which plays an essential role in giving it its amplification characteristics.
The main concept behind the working of RBJT is the principle of controlled rectification. This works by controlling the current flow between the emitter and collector. When the base of an RBJT is connected to a fixed voltage, the current flow is determined by the resistance of the base-to-emitter junction. By altering the potential difference between the emitter and base, it is possible to control the amplitude of the resulting current flow. The amplified version of the signal appearing at the collector is then proportionally collected by the transistor.
Application Field:
BLS2731-10,114 is widely used in various types of applications including audio amplifiers, power amplifiers for consumer speakers, and microwave communication. It is especially useful when applied for small signal amplification, as it does not require a large amount of current to be able to amplify a signal. This makes it an ideal candidate for applications where power consumption is a concern.
In terms of audio applications, these transistors are commonly integrated into preamplifiers and volume control circuits, as well as being used in sound equalizers and crossover networks. In the communication field, they are also known to be used in wireless communication systems, such as local area networks and mobile phone systems.
These types of transistors are also extremely advantageous in power-related applications. In particular, they can be integrated into high-voltage DC-DC converters, low-noise switching power supplies, and power converters. The advantage of using them here is that they possess high current gain and low saturation voltage, making them more efficient than other types of transistors.
The wide usage and application field of BLS2731-10,114 makes it possible to consider different types of projects while keeping power consumption low and at an acceptable level. It also gives the option to explore other areas of electronics and their applications with a reliable and commercially available device.
The specific data is subject to PDF, and the above content is for reference
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