Allicdata Part #: | BLS2731-20,114-ND |
Manufacturer Part#: |
BLS2731-20,114 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | TRANSISTOR RF POWER SOT445C |
More Detail: | RF Transistor NPN 75V 3A 3.1GHz 270W Chassis Mount... |
DataSheet: | BLS2731-20,114 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 75V |
Frequency - Transition: | 3.1GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 10dB |
Power - Max: | 270W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 500mA, 5V |
Current - Collector (Ic) (Max): | 3A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-445C |
Supplier Device Package: | CDFM2 |
Base Part Number: | BLS2731 |
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The BLS2731-20,114 is a radio frequency (RF) bipolar junction transistor (BJT). It is a type of a transistor that is typically used in applications that involve the transmission of signals, such as radar and wireless communication. The BLS2731-20,114 can operate over a wide range of frequencies, which makes it suitable for a variety of applications.
One of the most important features of the BLS2731-20,114 is its ability to produce high power output. This is accomplished by its pairing with a large signal amplifier. This amplifier is capable of amplifying signals up to an output level of up to 10 mW. The combination of an amplifier and the BLS2731-20,114 ensures a much higher output power than what is available from a single device.
The BLS2731-20,114 also has the ability to operate at high frequencies. This makes it ideal for applications that require high speed data transfer. The device also has a high switching speed, which makes it suitable for use in systems that require rapid response times. This also means that it can be used in applications that require extremely fast switching times.
The BLS2731-20,114 is also able to generate radio waves of various frequencies. This ability makes it ideal for use in radar systems. This includes applications such as traffic control, weather forecasting, and land radars. In these types of applications, the device is able to detect objects by emitting a signal and then measuring the reflected signal.
The BLS2731-20,114 is also able to operate in extreme temperatures. This makes it ideal for use in environments where temperatures range from very low to very high. The device is capable of operating in temperatures ranging from -65F (-55C) to +175F (+80C). This flexibility allows it to be used in a variety of applications across many different industries.
The BLS2731-20,114 is designed for use in a variety of systems and applications. It can be used in microwave, optoelectronics, and antenna systems. It is also suitable for use in surface-mount systems and in wire-wrap circuits. Its wide range of frequency and power output capabilities makes it a versatile device.
The BLS2731-20,114 works on the principle of a bipolar junction transistor. This type of transistor is made up of two electrons that are held together by a thin layer of insulation. When current passes through the transistor, it creates a flow of electrons between the two components.
The BLS2731-20,114 is a very versatile device. Its wide range of frequency and power capabilities make it suitable for many different applications. Its robust design ensures that it can operate in a variety of extreme temperatures. It is an excellent device for use in both commercial and military applications.
The specific data is subject to PDF, and the above content is for reference
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