BLS8G2731L-400PU

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	3.1GHz
Gain:	13dB
Voltage - Test:	32V
Current Rating:	--
Noise Figure:	--
Current - Test:	200mA
Power - Output:	400W
Voltage - Rated:	65V
Package / Case:	SOT539A
Supplier Device Package:	SOT539A

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The BLS8G2731L-400PU is a type of Field Effect Transistor (FET) used to amplify or switch electronic signals. It is a lateral N-channel enhancement mode MOSFET and is part of the "SQ" series of FETs from SemiQuik. The BLS8G2731L-400PU is particularly useful for radio frequency (RF) applications, as it has a high frequency response and low on-state resistance. The FET has three terminals, known as the gate, the source, and the drain. Basically, the FET works by modulating the current flowing between the source and the drain terminals by the amount of voltage applied to the gate. The BLS8G2731L-400PU has an insulated gate that needs an electric field in order to function, so it is considered an insulated-gate FET (IGFET). The BLS8G2731L-400PU has a breakdown voltage of 18 volts and an on resistance of 0.75 Ohms. This makes it ideal for DC/DC converter and switch-mode power supplies that don’t need high current ratings. High voltage systems will also benefit from the device’s low gate leakage current. The device has a maximum idling current of 30mA, which makes it suitable for circuits requiring high switching frequencies. The FET’s RF performance makes it especially useful in radio-frequency applications, such as amplifiers and oscillators. The gate input impedance is critical in such cases, since the amount of amplification or oscillation of the signal is dependent on the gate input impedance. The BLS8G2731L-400PU has a gate input impedance of 215 Ohms. This allows it to operate efficiently up to frequencies in the GHz range, making it particularly useful for wireless communication systems, as well as for other applications such as radio receivers. The BLS8G2731L-400PU is also suitable for switching applications, such as DC-DC converters and high voltage power supplies. In such cases, the on-state resistance becomes the critical factor. The BLS8G2731L-400PU has a low on-state resistance of 0.75 Ohms, allowing it to switch quickly and thus reducing losses associated with switching. The device also has a good dv/dt rating, making it suitable for turn-off and turn-on times which might otherwise be too slow. Overall, the BLS8G2731L-400PU is a versatile FET which is ideal for RF, high voltage, and switching applications. Its high frequency response, low on-state resistance, and high gate input impedance make it particularly suitable for RF applications, while its low on-state resistance and good dv/dt rating make it suitable for switching applications. It is a compact device with a breakdown voltage of 18 volts and an on resistance of 0.75 Ohms, making it ideal for a variety of applications.

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