BLS8G2731LS-400PU Allicdata Electronics
Allicdata Part #:

1603-1024-ND

Manufacturer Part#:

BLS8G2731LS-400PU

Price: $ 600.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 13DB SOT539B
More Detail: RF Mosfet LDMOS (Dual), Common Source 32V 200mA 3....
DataSheet: BLS8G2731LS-400PU datasheetBLS8G2731LS-400PU Datasheet/PDF
Quantity: 20
1 +: $ 546.13400
10 +: $ 537.66700
Stock 20Can Ship Immediately
$ 600.75
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 3.1GHz
Gain: 13dB
Voltage - Test: 32V
Current Rating: --
Noise Figure: --
Current - Test: 200mA
Power - Output: 400W
Voltage - Rated: 65V
Package / Case: SOT539B
Supplier Device Package: SOT539B
Description

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The BLS8G2731LS-400PU is a general-purpose, small signal N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This device is designed for switching and high frequency application, making it applicable for a wide range of uses in fields such as telecommunications and automotive.

The BLS8G2731LS-400PU is manufactured using advanced processing techniques, allowing for a highly efficient performance. Its dielectric breakdown is rated at 60V and its drain-source case breakdown is rated at 350V. It measures 2.6mm by 1.8mm, making it very suitable for space saving installations and soldering in circuit boards.

The BLS8G2731LS-400PU is designed primarily to be used as a general purpose switching device, although it also has applications in radio frequency (RF) circuits. The device can switch up to 400A at frequencies of up to 5GHz, making it ideal for applications such as radio transmission, cellular communication and satellite links. This transistor can also be used in applications such as Amplifiers, Oscillators, and Automotive control circuits.

Due to its small size and efficient performance, the BLS8G2731LS-400PU is particularly suitable for portable and low power consumption devices. As a result, it is increasingly being used in the rapidly growing field of mobile and wireless communication.

The BLS8G2731LS-400PU operates using the principle of channel modulation, a method of controlling an electronic device without the need for direct current (DC) action. This method is achieved by shifting charges in the gate-source region of the MOSFET to modulate the electrical resistance of the channel region. This technique is commonly referred to as modulation-doped field effect transistor (MODFET), or variable width MOSFET.

The BLS8G2731LS-400PU is a highly efficient device, offering low noise and distortion, as well as excellent linearity in its performance. The device also has high current capacity and can handle significant overloads, making it suitable for a wide range of applications.

The B

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