BLS9G2729L-350U

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are a crucial part of modern electronics. Field Effect Transistors (FETs) or MOSFETs are a specific type of transistor used for radio-frequency (RF) operations. The BLS9G2729L-350U power FET is a semiconductor device used for the amplification and switching of electronic signals in RF applications. This device has the following characteristics, allowing it to be utilized in a variety of applications.

Device Characteristics

The BLS9G2729L-350U is a high-power FET which can support both low-g and medium-g drain-source breakdown voltage applications. This device is capable of providing up to 250 W of RF power and can operate in both linear and saturated modes. Maximum operating temperature for the device is typically 175°C.

The device has drain-source breakdown voltage of 350V, drain-source on-state resistance of 100 mΩ, a gate-source threshold voltage of -2V, and a drain-gate capacitance of 3.2 pF. Additional features include a gate-source voltage of 10.5V, a forward transconductance of 0.006 S, and a rise and fall time of 4 ns and 4.5 ns, respectively.

Application Fields and Working Principle

The BLS9G2729L-350U is designed specifically for high-power RF applications, such as radio transmitters and satellite communication equipment. It is used for radio-frequency (RF) amplification, providing up to 250W of RF power which can be used for a variety of applications. The device is also used in many switching applications due to its low-g and medium-g drain-source breakdown voltage characteristic.

The working principle of the BLS9G2729L-350U is based on the traditional field-effect transistor (FET) theory. An electric field is applied between the gate and the source terminal which induces a charge on the source side. The source and the drain are then connected via an electrically conductive gate, called the gate dielectric. The electric current flow between the source and the drain is then regulated by the gate voltage. This electric current flow is then used to amplify or switch electronic signals.

Conclusion

The BLS9G2729L-350U FET is designed specifically for high-power RF applications. This device features an ultra-low g–drain-source breakdown voltage characteristic, allowing it to be used in a variety of applications. The device has maximum RF power of 250W and can operate in both linear and saturated modes. The working principle of the BLS9G2729L-350U is based on the traditional FET theory, in which an electric field is used to regulate the current flow between the source and drain.

The specific data is subject to PDF, and the above content is for reference