Allicdata Part #: | 1603-1153-ND |
Manufacturer Part#: |
BLS9G2934L-400U |
Price: | $ 246.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF MOSFET LDMOS 32V SOT502A |
More Detail: | RF Mosfet LDMOS 32V 400mA 2.9GHz ~ 3.4GHz 12dB 400... |
DataSheet: | BLS9G2934L-400U Datasheet/PDF |
Quantity: | 20 |
1 +: | $ 224.34900 |
10 +: | $ 217.60100 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.9GHz ~ 3.4GHz |
Gain: | 12dB |
Voltage - Test: | 32V |
Current Rating: | 4µA |
Noise Figure: | -- |
Current - Test: | 400mA |
Power - Output: | 400W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502A |
Supplier Device Package: | SOT502A |
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The BLS9G2934L-400U is a high-performance device for radio frequency (RF) applications. It is a MOSFET, which is a special kind of field-effect transistor (FET). It is designed to provide high levels of gain, low noise, and increased linearity when operated under RF conditions. This makes it suitable for a wide range of applications, such as wireless communication systems, wireless audio, and wireless video.
MOSFETs are composed of four terminals, known as the gate, drain, source, and bulk. The gate is the control terminal, which when applied a positive voltage, creates an inversion channel in the semiconductor material. This channel is necessary for current to flow in the circuit. The drain and source determine which direction current flows, while the bulk terminal is connected to the substrate material, which is typically a semiconductor. The source is the negative voltage terminal, and the drain is the positive voltage terminal.
The BLS9G2934L-400U features a high current capacity of 400 amps, which is suitable for applications such as RF power amplifiers. It has a low on-resistance of 9.3 mΩ, which allows more current to flow through the device. Additionally, it has a high breakdown voltage of 33 volts, which increases its suitability for use in high voltage applications. Furthermore, it has a low gate charge of 103.6 nC, allowing for fast switching speeds.
One of the main advantages of using a MOSFET is its high switching efficiency. This is due to the fact that MOSFETs have no moving components, which helps to reduce power losses. Additionally, MOSFETs are unipolar devices, meaning that they only require one type of voltage (either positive or negative) to operate, which makes them ideal for low voltage applications. In addition, they also provide improved isolation, which means they can be used to prevent interference between parts of a circuit.
The BLS9G2934L-400U is ideal for applications where high levels of linearity, low levels of noise, and high gain are required. It is suitable for use in wireless communication systems, wireless audio, and wireless video applications. Furthermore, due to its high current capacity and low gate charge, it is suitable for use in RF power amplifiers. Overall, the BLS9G2934L-400U is an excellent choice for high performance RF applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLS9G2934L-400U | Ampleon USA ... | 246.79 $ | 20 | RF MOSFET LDMOS 32V SOT50... |
BLS9G2934LS-400U | Ampleon USA ... | 246.79 $ | 20 | RF MOSFET LDMOS 32V SOT50... |
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