BR93H86RF-2CE2 Allicdata Electronics
Allicdata Part #:

BR93H86RF-2CE2TR-ND

Manufacturer Part#:

BR93H86RF-2CE2

Price: $ 0.20
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: AUTOMOTIVE MICROWIRE BUS 16KBIT(
More Detail: EEPROM Memory IC 16Kb (1K x 16) SPI 2MHz 8-SOP
DataSheet: BR93H86RF-2CE2 datasheetBR93H86RF-2CE2 Datasheet/PDF
Quantity: 2500
2500 +: $ 0.18375
Stock 2500Can Ship Immediately
$ 0.2
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (1K x 16)
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Description

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The BR93H86RF-2CE2 is a series of memory chip manufactured by Toshiba Corporation. It is used in a variety of electronic components and devices. The device is made from 2-Three layers of integrated circuit (IC) and has a built-in ultra-low-power phosphor PROM technology. The device supports serial and parallel Nonvolatile Memory (NVM). It is designed to provide data storage reliability and superior data retention with minimal power consumption.

Application Field

The BR93H86RF-2CE2 devices are widely used in industrial systems, consumer and automotive electronics applications. It is designed to be used in applications like digital cameras, notebook PCs, mobile phones, point-of-sale terminals, smart cards, digital household appliances, and automotive electronics modules. It is suited for applications where small size and low power are desirable.

Working Principle

The BR93H86RF-2CE2 utilizes a two-cell ultra-low-power phosphor PROM memory cell. The 2-cell PROM consists of two 1T-1C (one transistor and one capacitor) memory cells connected in series. The memory cell consists of a field effect transistor and a nonvolatile storage capacitor. The storage capacitor is charged or discharged depending on the logic state of the transistor, which provides the nonvolatile data storage. The device is programmed and erased by direct current and has a write cycle time of 10µs.

The PROM also contains a Nonvolatile Memory Controller (NVM) that provides the interfacing with the host microcontroller. The NVM is based on a single-cycle state machine architecture with 10bit addressing and 128 bytes of EEPROM memory space. The device also has a data register which handles the data transfer between the NVM and the host microcontroller. It also has a Reliability Tolerance Voltage module to ensure reliable data retention.

The BR93H86RF-2CE2 device is a low-power and reliable memory device with superior characteristics. Its small size and low power consumption make it suitable for a range of applications, from consumer to industrial systems. The device also provides data retention reliability and superior performance with minimal power consumption.

The specific data is subject to PDF, and the above content is for reference

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