Allicdata Part #: | BR93G86FVT-3AG2TR-ND |
Manufacturer Part#: |
BR93G86FVT-3AGE2 |
Price: | $ 0.15 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 16K SPI 3MHZ 8TSSOP |
More Detail: | EEPROM Memory IC 16Kb (1K x 16) SPI 3MHz 8-TSSOP-... |
DataSheet: | BR93G86FVT-3AGE2 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14145 |
6000 +: | $ 0.13405 |
15000 +: | $ 0.13172 |
30000 +: | $ 0.12860 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 16Kb (1K x 16) |
Clock Frequency: | 3MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP-B |
Base Part Number: | BR93G86 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BR93G86FVT-3AGE2 belongs to a type of memory known as DRAM or Dynamic Random Access Memory which is one of the most common RAM types used in computers. It is a volatile memory which means that when the power is applied, the contents are retained. When the power is shut off, the contents will be lost.
The BR93G86FVT-3AGE2 works on the principle of storing electrical charges in a capacitive layer built between the memory cells on a silicon chip. These memory cells need to be refreshed periodically to ensure that their data is correctly retained. The data stored in the cells is analog in nature i.e. it is stored in the form of electrical charges.
The BR93G86FVT-3AGE2 is commonly used in various applications such as computers, laptops, tablets, smartphones and other electronic devices. It enables these electronic devices to store and manipulate data quickly. It is also used in networking and telecommunications equipment, server farms and HDDs. In addition, it is used to enable rapid data access in a system-on-chip context.
The BR93G86FVT-3AGE2 has several features which make it an appealing choice for use in modern electronics, such as its fast processing speeds and power efficiency. This DRAM is also highly reliable and resilient to data corruption, and its low latency ensures that it is suitable for use in applications where data needs to be accessed quickly and reliably.
The BR93G86FVT-3AGE2 is suitable for use in a variety of applications which require reliable and fast memory access. It is especially useful for applications which require a high level of performance, due to its low latency and data integrity, and its power efficiency makes it a good choice for use in battery-powered applications.
The BR93G86FVT-3AGE2 can be used in a range of configurations such as single-data-rate (SDR) and double-data-rate (DDR) configurations. It also offers support for ECC (Error Correcting Code) which can help to reduce data corruption due to memory errors. This DRAM is highly configurable, allowing it to be used in a range of applications.
In summary, the BR93G86FVT-3AGE2 is a type of DRAM memory which works on the principle of storing electrical charges in a capacitor layer. It is commonly used in computers, laptops, tablets and other electronic devices. It is a reliable and fast memory which is also power efficient and is suitable for use in a variety of applications. Its low latency and ECC support make it an ideal choice for applications which require high speed memory access and data integrity.
The specific data is subject to PDF, and the above content is for reference
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