Allicdata Part #: | BR93G56FVM-3BGTTR-ND |
Manufacturer Part#: |
BR93G56FVM-3BGTTR |
Price: | $ 0.12 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 2K SPI 3MHZ 8MSOP |
More Detail: | EEPROM Memory IC 2Kb (128 x 16) SPI 3MHz 8-MSOP |
DataSheet: | BR93G56FVM-3BGTTR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10478 |
6000 +: | $ 0.09929 |
15000 +: | $ 0.09757 |
30000 +: | $ 0.09526 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 2Kb (128 x 16) |
Clock Frequency: | 3MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) |
Supplier Device Package: | 8-MSOP |
Base Part Number: | BR93G56 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BR93G56FVM-3BGTTR is a special type of dynamic random access memory (DRAM) developed by the Elsinore Corporation. It is specifically created as a device used in high performance computing applications, such as supercomputers, hyperscale data centers and enterprise applications.
Essentially, the BR93G56FVM-3BGTTR is an advanced and improved version of Elsinore\'s BR93G56FVH-3BGTTR device, which became available in 2014. It features reduced power consumption, improved thermal profile, increased storage, and increased reliability and scalability when compared to its predecessor. It has been designed with advanced features such as Real Time Withstand Temperature Stress (TRT), advanced memory error correction, and multiple channel options.
The working principle of the BR93G56FVM-3BGTTR is based on dynamic random access memory (DRAM). Basically, DRAM is a digital form of memory that stores data using the charge stored on tiny capacitors. Unlike static random access memory (SRAM) and other types of memory, each bit of data stored on the DRAM must be constantly refreshed to remain intact. To achieve this, data is read from the memory and rewritten using a external clock.
The BR93G56FVM-3BGTTR is specifically engineered to be reliable and robust, with the ability to achieve high performance even in the toughest of environments. This device features advanced error correction and detection strategies, as well as multiple channel support for increased scalability. The device also features advanced temperature resistant technology, which allows it to operate consistently in extreme temperatures.
To ensure accurate and reliable data storage, the BR93G56FVM-3BGTTR uses a variety of advanced memory error correction techniques. These techniques include ECC (Error Correcting Code) and parity checks, which help to detect errors and correct them before they can cause any damage to the data. In addition, the device features a low power self refresh option, which helps to reduce power consumption and maintain a consistent performance even in high power usage scenarios.
The BR93G56FVM-3BGTTR is a versatile and reliable memory with advanced features and scalable performance that makes it well-suited for high performance computing applications. Its low power consumption and improved thermal profile makes it an attractive choice for hyperscale data centers, enterprise applications, and other high-performance environments. With its advanced error correction and detection strategies and multiple channel support, the device offers excellent reliability and scalability that can meet the needs of even the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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