Allicdata Part #: | BR93L56RF-WE2TR-ND |
Manufacturer Part#: |
BR93L56RF-WE2 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 2K SPI 2MHZ 8SOP |
More Detail: | EEPROM Memory IC 2Kb (128 x 16) SPI 2MHz 8-SOP |
DataSheet: | BR93L56RF-WE2 Datasheet/PDF |
Quantity: | 2500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 2Kb (128 x 16) |
Clock Frequency: | 2MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP |
Base Part Number: | BR93L56 |
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Memory is an important component of a computing system that allows data to be stored and retrieved. It is essential for the operation of any computer system, as it allows data to be read from and written to. The BR93L56RF-WE2 is one type of memory module that is used in a variety of computing applications.
The BR93L56RF-WE2 is a dynamic random-access memory (DRAM) chip that was developed by Elpida in 2011. It is an 8-bit memory chip that is well-suited for use in applications that require high speed and low power consumption. It is available in a range of densities from 4Mb to 32Mb. The BR93L56RF-WE2 has a very high data transfer rate of up to 633MHz and can be operated at a low voltage.
The BR93L56RF-WE2 is designed for use in embedded systems, such as cellular phones, PDAs and hearing aids. It is also used in industrial automation, medical instrumentation and military applications. It is well-suited for use in low-power, high-speed embedded applications, such as those that require real-time processing.
The working principle of the BR93L56RF-WE2 is based on dynamic random-access memory (DRAM) technology. This type of memory is based on the use of capacitors to store data. When a voltage is applied to the capacitor, it stores an electrical charge. When the voltage is removed, the electrical charge is stored in the capacitor, allowing the data stored in the memory cell to be retrieved.
The BR93L56RF-WE2 uses the principles of DRAM technology to store and retrieve data. It is composed of a memory array and associated control logic. The memory array consists of rows and columns of memory cells. Each memory cell consists of a capacitor and an access transistor. When a voltage is applied to the row and column of a memory cell, the access transistor allows a charge to flow into the capacitor, thus changing its state and storing data. This process is known as "reading." When a voltage is removed from the row and column of a memory cell, the access transistor allows the charge stored in the capacitor to discharge, thus retrieving the stored data. This process is known as "writing."
The BR93L56RF-WE2 is a reliable and efficient memory module that is used in a variety of applications. Its high data transfer rate, low power consumption and small physical size make it ideal for use in embedded systems. Its DRAM technology allows it to store and retrieve data quickly and reliably, making it a valuable memory solution in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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