Allicdata Part #: | BR93L66RFVT-WE2TR-ND |
Manufacturer Part#: |
BR93L66RFVT-WE2 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 4K SPI 2MHZ 8TSSOP |
More Detail: | EEPROM Memory IC 4Kb (256 x 16) SPI 2MHz 8-TSSOP-... |
DataSheet: | BR93L66RFVT-WE2 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 4Kb (256 x 16) |
Clock Frequency: | 2MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP-B |
Base Part Number: | BR93L66 |
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The BR93L66RFVT-WE2 application field and working principle
The BR93L66RFVT-WE2 is a type of non-volatile semiconductor memory. It is chiefly composed of a memory cell array and a control circuit. The memory cell array mainly consists of SRAM cells, DRAM cells, NV RAM cells and NAND flash cells.
Application Field of BR93L66RFVT-WE2 Memory
The BR93L66RFVT-WE2 memory is mainly used in digital photo, digital audio, digital video, computer systems, communication systems, home appliances, automotive (ECU), industrial systems, and other embedded applications. It is also used in various memory cards and storage devices. In addition, they are used in many industrial and consumer applications that require high storage capacity, low power consumption, and high speed.
Working Principle of BR93L66RFVT-WE2 Memory
The working principle of this type of memory is based on the principle of write once and read many times (WORM). This means that once the data is written to the memory it cannot be erased or modified. The memory can be accessed quickly, as the required address can be provided directly to the address bus.
For read operations, the memory address is provided on the address bus and the requested data is output. For write operations, the data to be written is provided on the data bus and the memory address is provided on the address bus. The control circuit in the memory takes care of the writing process.
In order to ensure the data integrity, the memory contains a number of error-correction codes, which are used to detect and correct the errors that occur during the read operations. This ensures that the data retrieved is accurate and reliable.
The memory is also equipped with built-in protection mechanisms, which prevent corruption of data due to power failure or any other external interference. Further, the memory also provides a number of security features such as write protection, read protection, chip erase and others.
To summarise, the BR93L66RFVT-WE2 memory is a type of non-volatile semiconductor memory that is mainly used in various digital storage applications. It has a capacity of up to 8GB and offers data protection, data integrity and security features.
The specific data is subject to PDF, and the above content is for reference
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