Allicdata Part #: | BSG0813NDIATMA1-ND |
Manufacturer Part#: |
BSG0813NDIATMA1 |
Price: | $ 0.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 25V 19A/33A 8TISON |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 1... |
DataSheet: | BSG0813NDIATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.67135 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 19A, 33A |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 12V |
Power - Max: | 2.5W |
Operating Temperature: | -55°C ~ 155°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TISON-8 |
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A BSG0813NDIATMA1 is part of a category of semiconductor devices known as arrays, which are collections of transistors - FETs, MOSFETs - grouped together on a single chip that enables multiple components to be powered or driven in order to achieve a desired outcome in a device or system. The specific array under consideration is an 8-bit transmission gate switch with a drain-gate voltage of 8V and an on-resistance of 1uohm. The array consists of 8 transistors - each connected with 2 source-gate.
BSG0813NDIATMA1 has two major applications: power converters and digital logic circuits. Power converters help to transfer between low-voltage and high-voltage power sources. This is done mainly through the use of the transmission gates, which enable the conversion of AC (alternating current) power to DC (direct current) power - a process also known as rectification. In other words, the transmission gates work as switches, which can be activated or deactivated in order to control the flow of current between two points, resulting in the regulation of electrical power.
In digital logic circuits, BSG0813NDIATMA1 helps to implement logic functions such as OR, AND, XOR and NOT. These operations are performed by the transmission gates, which can be used to selectively allow the flow of electricity between two points. This is achieved through the different source-gate combinations, which can be either opened or closed depending on the desired outcome. In other words, the gates are used as switches, which can be activated or deactivated in order to control the flow of electricity and achieve the desired logic operation.
The working principle of the BSG0813NDIATMA1 has two components: the MOSFETs and the transmission gate switches. The MOSFETs are used to provide the electrical isolation between the two points of the device, which allows current to flow between them. This is achieved by connecting the source and the drain of the MOSFET, which creates a barrier between the two terminals to avoid current leakage. The transmission gate switches are then used to selectively allow or deny the flow of current by controlling the voltage at the source and the drain.
To sum up, the BSG0813NDIATMA1 is an 8-bit transmission gate switch with a drain-gate voltage of 8V and an on-resistance of 1uohm. It is used in power converters and digital logic circuits to control the flow of electricity between two points. This is achieved through the MOSFETs and transmission gate switches, which are used to provide electrical isolation and selectively allow or deny the current flow.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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