BSG0812NDATMA1

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BSG0812NDATMA1 is a p-channel enhancement-mode metal oxide semiconductor field-effect transistor (MOSFET) in key systems for consumer electronics. It has a N channel power MOSFET. It is available in 8-pin dual in-line package (DIP) and uses electrically insulating P-oxide of silicon as a gate dielectric. The package size of 38-mils by 38-mils allows a space savings of up to fifty percent compared to the previously available standard packages.

BSG0812NDATMA1 works in enhancement-mode under the control of gate-source voltage (VGS). As the voltage across the gate and source terminals exceed a specific threshold voltage it will then turn on or off the drain current. It has an internal dielectric gate insulation which means that the reverse voltage is normally below the gate threshold voltage (VGS) to prevent enhancement mode operation.

BSG0812NDATMA1 provides very low resistance from source to drain under low gate-source voltage (VGS). It also has a high input impedance and a low capacitance between gate and source terminals. It provides superior anti-corrosive protection due to the presence of Tin-plated leadframes.

The BSG0812NDATMA1 has an operating temperature range from -55°C to +150°C, making it ideal for use in consumer electronic devices operating on a consumer specified temperature range. The BSG0812NDATMA1 is widely used in consumer electronic devices such as personal computers, refrigerators, air conditioning systems, and television sets. It is also used in automotive applications such as power steering systems, brake pedal control, and tail light illumination.

BSG0812NDATMA1 is commonly used in high-performance analog and digital circuits requiring high switching speed, low noise, and low power dissipation. It is also popular in low power portable devices such as mobile phones and PDAs. Since it is a high-gain device, it has a very fast switching speed and low power dissipation.It is known for excellent high frequency operation. The low gate-source capacitance make it an ideal choice for high speed switching applications. The wide finger gap between source and drain allows for easy heat dissipation, resulting in superior load handling characteristics and over-temperature protection. The high frequency operation is typically less than 0.5ohm at a 1GHz frequency, making it ideal for switching circuits.

The BSG0812NDATMA1 is an ideal choice for applications that require a low input voltage, low noise and fast switching times. It is capable of supporting a wide range of applications, from large current pulse output applications to low frequency switching, and can be used to achieve superior results in almost any circuit design.

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