Allicdata Part #: | BSM50GAL120DN2HOSA1-ND |
Manufacturer Part#: |
BSM50GAL120DN2HOSA1 |
Price: | $ 48.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 MED POWER 34MM-1 |
More Detail: | IGBT Module Single Switch 1200V 78A 400W Chassis ... |
DataSheet: | BSM50GAL120DN2HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 43.68990 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Single Switch |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 78A |
Power - Max: | 400W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 3.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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An IGBT module is composed of several IGBTs, which are insulated gate bipolar transistors (IGBTs), modules, and other components. BSML50GAL120DN2HOSA1, commonly known as the IBGT module, is a three-phase inverter-based IGBT module that can provide superior gate turn-on voltage for high power conversion efficiency and power quality. It is used extensively in motor control systems, inverters, rectifiers and other industrial applications.
Application field of BSML50GAL120DN2HOSA1
BSML50GAL120DN2HOSA1 has a strong ability to withstand external interference and over-temperature protection, and has a wide range of applications in motor control systems and inverters. It can be used in automotive, aerospace, communication, and other industrial applications, and can be used in rectifiers, UPS systems, and power conversion systems.
In addition, BSML50GAL120DN2HOSA1 can also help reduce the overall system power losses, providing power efficiency while providing overload protection and secure operation of the system. It can also be used in high-speed switching applications, such as UPS systems and welding inverters.
Working principle of BSML50GAL120DN2HOSA1
BSML50GAL120DN2HOSA1 is based on a three-phase inverter-based IGBT module, which uses insulated gate bipolar transistors (IGBTs) as the main switching element. IGBTs are semiconductors that perform the dual functions of a transistor and a diode, and have the ability to switch current in either direction. When a voltage is applied, an electric field is generated across an oxide layer that separates the n-type and p-type semiconductors. This electric field creates a channel through which current can flow in an n-p-n configuration.
With the BSML50GAL120DN2HOSA1, gate signal turns on the IGBTs and allows the current to flow along the path formed by the IGBTs. As the current passes through the IGBTs, it is converted into a three-phase AC power signal. This signal is then supplied to the motor or inverter being controlled. The module also includes protective elements such as over-current protection and overtemperature protection.
Conclusion
The BSML50GAL120DN2HOSA1 is a three-phase inverter-based IGBT module used extensively in motor control systems, inverters, rectifiers and other industrial applications. It is composed of insulated gate bipolar transistors (IGBTs) and other components, and its working principle relies on the electric field generated by applied voltage to create a channel in an n-p-n configuration, allowing current to flow along the path formed by the IGBTs. The module provides superior gate turn-on voltage for high power conversion efficiency and power quality, and also provides protection against external interference and over-temperature.
The specific data is subject to PDF, and the above content is for reference
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