Allicdata Part #: | BSM50GD120DN2E3226BOSA1-ND |
Manufacturer Part#: |
BSM50GD120DN2E3226BOSA1 |
Price: | $ 93.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 LOW POWER ECONO2-2 |
More Detail: | IGBT Module Three Phase Inverter 1200V 50A 350W C... |
DataSheet: | BSM50GD120DN2E3226BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 84.67200 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 50A |
Power - Max: | 350W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 3.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BSM50GD120DN2E3226BOSA1 is a power semiconductor module that belongs to the family of insulated-gate bipolar transistors (IGBT) modules. In this article, we will look at the module’s application field, as well as its working principle.
Application Field
The BSM50GD120DN2E3226BOSA1 module provides an efficient, controlled switch for applications, such as inverter systems, that require power of up to 1,200 volts and 50 amperes. It is designed to provide superior power inverter performance, current and temperature stability, and reliability. The module is suitable for medium- and high-voltage applications and specifically for the following applications:
- Motor drives
- Uninterruptible Power Supply (UPS)
- Computer power supplies
- Photovoltaic systems
- Electrical Welding Machines
Working Principle
The BSM50GD120DN2E3226BOSA1 module operates using an insulated-gate bipolar transistor (IGBT) topology at a switching frequency of up to 5kHz. The IGBT topology combines the speed of a power MOSFET with the low-on-resistance and low-noise characteristics of a bipolar transistor. This combination eliminates the need for separate drive components and makes the switch more robust and reliable.
In terms of circuit operation, the switching device in the module conducts current or cuts off current depending on the applied signal. When the output signal is low, the MOSFETs in the topology turn off, stopping the current flow through the circuit. Conversely, when the signal is high, the MOSFETs in the topology turn on, allowing current to flow through the circuit.
The module also contains protection components and an integrated temperature sensor. These components help to protect the module against excessive current, excess temperature, and other faults. The module is also designed with an intermediate isolation level and is compliant with UL and IEC standards.
Conclusion
In conclusion, the BSM50GD120DN2E3226BOSA1 module is an insulated-gate bipolar transistor (IGBT) module used in applications that require power of up to 1,200 volts and 50 amperes. It is designed to provide superior power inverter performance, current and temperature stability, and reliability. The module also contains protection components and an integrated temperature sensor, which help to protect it against excessive current, excess temperature, and other faults.
The specific data is subject to PDF, and the above content is for reference
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