Allicdata Part #: | BSM50GB170DN2HOSA1-ND |
Manufacturer Part#: |
BSM50GB170DN2HOSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1700V 72A 500W MODULE |
More Detail: | IGBT Module Half Bridge 1700V 72A 500W Chassis Mo... |
DataSheet: | BSM50GB170DN2HOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 72A |
Power - Max: | 500W |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 50A |
Input Capacitance (Cies) @ Vce: | 8nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BSM50GB170DN2HOSA1 is a module of insulated gate bipolar transistors (IGBTs) that consists of two half bridge sites. IGBTs are semiconductor devices developed from combining the best features of MOSFETs and bipolar transistors. This type of module contains two insulated gate bipolar transistors connected by a sole gate, with both gate and emitter outputs.
The application fields of BSM50GB170DN2HOSA1 are primarily in the industrial automation and metering industries. Its high temperature operating range and low capacitive output gate permit usage in applications with demanding operating conditions. The two gate outputs allow for easy control of the gate’s base current and the module’s gate circuit protection. These features, combined with the module’s power rating and superior switching performance, make it an ideal choice when used in motor drives, renewable energy systems, lighting control, and similar control system applications.
The IGBT’s working principles revolve around the use of voltage pulsing. When voltage is applied to the gate of the module, the junction between the emitter of the IGBT, the base of the IGBT, and the collector of the transistor are all shifted to a reverse potential. This reverse potential permutes the current flow when the base current, in the form of voltage, is applied.
This current flow is then constantly kept at a level that is determined by the base current. This control of the current flow is known as the turn-off phase of the IGBT operation. By sending an appropriate gate voltage and timing pulses to the module’s gate outputs, the IGBTs can be controlled in cyclic fashion for steady state operation.
The current module also has an internal EMT (enclosed tabular magnet transformer) which protects the IGBTs from overvoltages and undervoltages. The EMT consists of a current transformer which splits a single current amount into two halves. This helps in reducing the amount of power used by the module and prolonged its operational life.
The BSM50GB170DN2HOSA1 module is one of the most efficient and accurate IGBT modules in the market. Its features, along with its high switching speeds and high temperature range make it a great choice for applications that require superior switching performance and accuracy. The EMT included helps users optimize their system’s energy efficiency and allows them to use their devices in the most extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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