Allicdata Part #: | BSM50GP60GBOSA1-ND |
Manufacturer Part#: |
BSM50GP60GBOSA1 |
Price: | $ 94.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 LOW POWER ECONO3-3 |
More Detail: | IGBT Module Three Phase Inverter 600V 70A 250W Ch... |
DataSheet: | BSM50GP60GBOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 85.54490 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 70A |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 2.55V @ 15V, 50A |
Current - Collector Cutoff (Max): | 500µA |
Input Capacitance (Cies) @ Vce: | 2.8nF @ 25V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BSM50GP60GBOSA1 module is a high-voltage integrated device, featuring an insulated-gate bipolar transistor (IGBT) and a diode in a single housing that helps to simplify power module design and system manufacturing processes.
The BSM50GP60GBOSA1 has a variety of features and is suitable for a range of applications. Its CE-rated voltage and fast switching time make it an ideal choice for high-efficiency power systems, such as motor drives, lighting, uninterruptible power supply, medical and motor control. It has a wide operating temperature range from -55°C to +125°C and offers high power density, reducing the risk of over-heating in power applications.
The BSM50GP60GBOSA1 is designed to reduce noise and improve EMI/RFI performance. It has a low on-state loss, high input impedance, and low gate drive energy, which helps to increase efficiency and reduce cost, and it is also RoHS compliant and Pb-free, offering additional environmental advantages.
In terms of its working principle, the BSM50GP60GBOSA1 integrates an IGBT and diode in a single housing. The IGBT consists of two components, an n-type MOSFET transistor and a p-type bipolar transistor, which are connected in series to form an output transistor. The IGBT also has a gate that is used for controlling the device\'s switching behaviour. In addition, the diode connected in anti-parallel to the IGBT helps protect the device from the reverse voltage.
When in the on-state, the gate voltage is applied to the IGBT to turn it on and the current flows from the collector to the emitter. When in the off-state, the gate voltage is displaced and the current flowing through the IGBT is blocked. This multi-functional capability of the BSM50GP60GBOSA1 makes it especially suitable for applications requiring fast switching such as motor drives, lighting and uninterruptible power supplies.
In conclusion, the BSM50GP60GBOSA1 module is an ideal choice for cost-effective, high-efficiency power systems. Its insulated-gate bipolar transistor (IGBT) and diode, combined with its high CE-rated voltage and fast switching time, make it especially suitable for motor drives, lighting and uninterruptible power supplies. It is also RoHS compliant and Pb-free for added environmental benefits, and its low on-state loss and high input impedance help to increase efficiency and reduce cost.
The specific data is subject to PDF, and the above content is for reference
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