Allicdata Part #: | BSM50GB120DN2HOSA1-ND |
Manufacturer Part#: |
BSM50GB120DN2HOSA1 |
Price: | $ 52.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 MED POWER 34MM-1 |
More Detail: | IGBT Module Half Bridge 1200V 78A 400W Chassis Mo... |
DataSheet: | BSM50GB120DN2HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 47.46670 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 78A |
Power - Max: | 400W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 3.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The BSM50GB120DN2HOSA1 module is a key component of transistors and IGBTs, and it is widely used in many fields. It has a unique structure and working principle that distinguish it from other components.
The BSM50GB120DN2HOSA1 module is composed of an IGBT, a diode and an auxiliary circuit, also known as a clamping circuit. The IGBT comprises a cell structure consisting of a vertical insulated gate bipolar transistor (IGBT) and a freewheeling diode. The diode is inversely connected to the IGBT, and the auxiliary circuit consists of a freewheeling diode and a clamping circuit. In addition, the auxiliary circuit also includes an energy absorption resistor, a discharging resistor and a smoothing capacitor, which are used to control the voltage and current of the IGBT.
The working principle of the BSM50GB120DN2HOSA1 module is as follows: firstly, when a gate voltage is applied to the IGBT, it turns on and allows current to flow through it. Then, the IGBT will stop conducting current when the gate voltage is removed. The freewheeling diode will then turn on, becoming the primary conducting channel of the current and allowing the stored energy to be released. When the current decreases, the auxiliary circuit enters the clamping stage and absorbs the excessive energy stored in the capacitor. Finally, the diode and the clamping circuit cooperate to achieve the stable operation of the module.
The application field of the BSM50GB120DN2HOSA1 module is quite extensive. Its main application fields are drives, power converters and power electronics systems. In drives, it is used in high-performance permanent magnet motors and switching power supplies, which can help to increase their efficiency and reduce power consumption. In power converters, the BSM50GB120DN2HOSA1 module can be used for frequency conversion control, uninterruptible power supply, solar inverter and UPS systems. In addition, it can also be used in a variety of other applications, such as automotive electronics and telecommunications.
Thus, the BSM50GB120DN2HOSA1 module has a unique structure and working principle that make it ideal for many uses. Its applications range from drives and power converters to a variety of other fields. With its unique combination of features and performance, the BSM50GB120DN2HOSA1 module is a key component in many transistors and IGBTs.
The specific data is subject to PDF, and the above content is for reference
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