BSO4804 Allicdata Electronics
Allicdata Part #:

BSO4804INTR-ND

Manufacturer Part#:

BSO4804

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 30V 8A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 8A 2W Surface ...
DataSheet: BSO4804 datasheetBSO4804 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 30µA
Base Part Number: BSO4804
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Introduction to BSO4804

The BSO4804 is a type of BiCMOS field effect transistor (FET) array specifically designed for use in high-speed, low-power applications. The main advantage of the BSO4804 is its ability to switch quickly between on and off states due to the high switching speed of its internal FETs and its low power consumption. The BSO4804 can be used to control a wide range of electronic devices, including those in the medical, automotive, industrial, and consumer electronics markets.

Application Field of BSO4804

The BSO4804 can be used to control a wide range of devices, with applications ranging from controlling digital and analog signals in consumer electronics devices to data transmission in automotive, medical, and industrial equipment. The BSO4804 can also be used in an array, forming a type of cascading FET array that is capable of handling large amplitude signals. This makes it well-suited for use in power control, data communications, and signal conditioning.

BSO4804 Working Principle

The BSO4804 is composed of four main parts: the gate, source, drain, and bulk. When power is applied to the gate, electrons are attracted to the gate and repel the electrons in the source and drain. This creates an electric field within the FET, and when the voltage between the source and drain goes above a certain threshold, the electric field is powerful enough to cause the electrons to flow, forming an electric current. The current is then carried through the drain, and the device is turned on.

The advantage of using a FET array instead of a single FET is that it allows for more precise control over the flow of current, as the FETs can be arranged in a cascading pattern to create a stronger electric field. This allows for more precise and efficient control of the current.

The BSO4804 can be used in both high-speed and low-power applications. Its low power-consumption is beneficial for applications where energy efficiency is a priority, such as consumer electronics and portable devices. Its high switching speed is also beneficial for high-speed applications, such as data transmission and data acquisition.

Conclusion

The BSO4804 is an impressive FET array, specifically designed for high-speed, low-power applications. Its low power-consumption and high switching speeds make it well-suited for use in consumer electronics, portable devices, data transmission, and data acquisition. The FET array in the BSO4804 allows for precise and efficient control of the electric current, making it a valuable tool for both high-speed and low-power applications.

The specific data is subject to PDF, and the above content is for reference

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