Allicdata Part #: | BSO4822INTR-ND |
Manufacturer Part#: |
BSO4822 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 12.7A 8-SOIC |
More Detail: | N-Channel 30V 12.7A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | BSO4822 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 55µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1640pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26.2nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 12.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSO4822 is a single off-state control insulated gate Bi-polar transistor (IGBT). The IGBT is a three-terminal power semiconductor device, used as a switch or amplifier in electronic circuits. It differs from an ordinary bi-polar transistor in that it has an insulated gate (IG), which is completely isolated from the main body of the transistor by an insulating layer, such as a layer of silicon dioxide (SiO2). This makes it possible to control the operation of the transistor with relatively low voltages applied to the gate, as opposed to the much higher voltages needed to control a standard bi-polar transistor.
The BSO4822 can be used in applications requiring control of high current and voltage. It is suitable for circuits requiring high-speed switching, such as power management systems, motor control and high-frequency switching. It has a maximum operating voltage of 100V, a break-down voltage of 300V, and a maximum operating current of 2.5A. It is also designed for a wide range of temperature ranges, from -55°C to 150°C.
The working principle of the BSO4822 is quite simple. It uses an insulated gate to control the conduction of current. When a voltage is applied to the gate, it creates an electric field, which acts to repel electrons and thus prevents current from flowing through the transistor. Conversely, when the gate voltage is removed, the electrons can flow freely, allowing current to flow through the transistor. This is the basis of switching – enabling current to be controlled with relatively low gate voltages and therefore allowing the control of higher voltages and currents.
The BSO4822 has a variety of applications, including: power conversion, motor control, voltage regulation, power management, and high-frequency switching. It is suitable for switching applications, such as AC/DC converters and solid-state relays. It can also be used in applications requiring very high temperature, such as industrial and automotive environments. The insulated gate Bi-polar transistor can also be used in motor control applications, such as pump and motor speed controllers.
In summary, the BSO4822 is an insulated gate Bi-polar transistor (IGBT) suitable for applications requiring high current and voltage control. It offers advantages such as high switching speed and wide temperature range, as well as a maximum operating voltage of 100V and break-down voltage of 300V. Additionally, it can be used in a variety of applications, such as power conversion, motor control, voltage regulation and power management.
The specific data is subject to PDF, and the above content is for reference
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