Allicdata Part #: | BSO4420XTINTR-ND |
Manufacturer Part#: |
BSO4420T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 13A 8-SOIC |
More Detail: | N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | BSO4420T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 80µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2213pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33.7nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 7.8 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSO4420T is a type of MOSFET (metal oxide semiconductor field effect transistor) designed to enhance performance in concept and circuit design. It is a single device in which current can be steered between two output terminals by an electric field established by an input signal from a gate terminal.
A MOSFET is a device that can control the flow of power between two terminals by the application of a voltage to a third terminal. They come in two basic types: N-channel and P-channel. The BSO4420T is an N-channel device, meaning that when the gate is given a positive voltage, current will flow from the source to the drain, and when the gate is given a negative voltage, current will flow from the drain to the source. This type of transistor is very helpful in amplifying both power and signals.
The BSO4420T is characterized by low on-state resistance (RDSON) and fast switching speeds, making it suitable for applications that require high current and power. These have commonly been used in power supplies, motor control circuits, and other power management applications. In addition, it is also widely used for many automotive, industrial, and even medical applications due to its robust design.
The working principle of the BSO4420T is based on the use of an occurrence called the MOSFET effect. This occurs when a reverse biased PN junction is formed between the gate and the semiconductor material, forming what is called an insulated gate. This gate is then used to modulate the flow of electrons across the source and drain terminals, thus controlling the flow of current. Because of the insulated gate, the voltage can be applied to the gate without it affecting the current flow through the device.
In order to properly apply the BSO4420T, it is generally necessary to use a power supply, as this device needs positive and negative input gates in order to function properly. The most common setup involves using an NPN (negative-positive-negative) bipolar junction transistor and a PNP (positive-negative-positive) transistor to drive the gate\'s voltage. This configuration is fairly simple and can be done with readily available components. As with all semiconductor devices, care should be taken when handling the BSO4420T in order to prevent it from being damaged.
Overall, the BSO4420T is an incredibly versatile MOSFET device that can be used for a variety of purposes. It is frequently used in applications where high current and power are needed, as well as for control and signal amplification, and has been used for a range of industrial and medical purposes. Thanks to its simple operation and robust design, it has become a staple of many industries.
The specific data is subject to PDF, and the above content is for reference
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