BT169H/L01EP Allicdata Electronics
Allicdata Part #:

BT169H/L01EP-ND

Manufacturer Part#:

BT169H/L01EP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: WeEn Semiconductors
Short Description: THYRISTOR SCR 800V TO-92
More Detail: SCR 800V 800mA Sensitive Gate Through Hole SOT-54A
DataSheet: BT169H/L01EP datasheetBT169H/L01EP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Current - Hold (Ih) (Max): 3mA
Base Part Number: BT169
Supplier Device Package: SOT-54A
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
SCR Type: Sensitive Gate
Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 10A
Current - Off State (Max): 100µA
Series: --
Current - On State (It (RMS)) (Max): 800mA
Current - On State (It (AV)) (Max): 500mA
Voltage - On State (Vtm) (Max): 1.7V
Current - Gate Trigger (Igt) (Max): 100µA
Voltage - Gate Trigger (Vgt) (Max): 800mV
Voltage - Off State: 800V
Part Status: Active
Packaging: Bulk 
Description

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.< div style="text-align: center;">< br>< div style="font-weight: bold; font-size: 28px;">Thyristors - SCRs< br>< /div>< br>< div style="text-align: left;">The BT169H/L01EP is a silicon controlled rectifier (SCR). It is a four-layer, silicon-controlled rectifier that features low on-state voltage drop, fast switching and high blocking voltage. The device is suitable for use in AC switching, power-line control and low-power applications.< br>< br>The SCR is a semiconductor device that uses a layer of p-type semiconductor between two n-type semiconductor materials. The p-type layer lies between n-type and n-type layers, forming the three-layer structure of an SCR. This structure allows the device to switch on and off with only a fraction of a second delay. SCRs require only a low power signal to turn on and are not affected by the polarity of the applied signal, so they are extremely reliable when used in AC applications.< br>< br>The BT169H/L01EP applies to the field of AC switching, power-line control, and low-power applications. It is a low current, high voltage device with a blocking voltage or breakdown voltage of up to 600 volts. The device is highly capable of withstanding high inrush currents, which makes it suitable for use in highly capacitive loads such as motor starters, AC line voltage control and low-power applications like static relays, switches and small SCR power units. The device is capable of providing fast switching and low on-state voltage drop in AC circuits, which results in the reduction of total power consumption and improved efficiency.< br>< br>When used for AC applications, the BT169H/L01EP has a typical turn-on time of less than 50 milliseconds. This can enable lower cost of ownership, as the device still provides the same level of performance even with short turn-on times. The device can be used in a wide range of AC conditions, from low frequency to high frequency, high cycles to low cycles. This makes it a particularly valuable device in power-line control, motor starter, static relays, and switch applications.< br>< br>Overall, the BT169H/L01EP is a silicon controlled rectifier (SCR) with a wide range of applications. Its four-layer, silicon-controlled rectifier structure makes it well-suited for AC switching, power-line control and low-power applications. The device has a low on-state voltage drop, fast switching and high blocking voltage, making it ideal for highly capacitive loads. With a typical turn-on time of less than 50 milliseconds, the device can provide lower cost of ownership even with short turn-on times. This makes the BT169H/L01EP an ideal solution for a wide range of AC conditions.< br>< br>< /div>

The specific data is subject to PDF, and the above content is for reference

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