Allicdata Part #: | BU900TP-ND |
Manufacturer Part#: |
BU900TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN TRIL 370V 5A SOT-82 |
More Detail: | Bipolar (BJT) Transistor NPN - Trilinton, Zener Cl... |
DataSheet: | BU900TP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Trilinton, Zener Clamp |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 370V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 3mA, 3A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 7000 @ 1A, 5V |
Power - Max: | 55W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SOT-82 |
Supplier Device Package: | SOT-82-3 |
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TheBU900TP is a bipolar Junction Transistor (BJT) that is used primarily in commercial and industrial applications. It is a single-junction high-power transistor designed to operate at currents of up to 20 amperes. It has a maximum collector-emitter voltage rating of 300 Volts and a maximum emitter-base voltage rating of 10 Volts. The BU900TP is manufactured using the latest in BJT technology and is able to handle high current loads with relative ease.
The main use of the BU900TP is as an amplifier for a variety of industrial applications. It is suitable for use as an audio or power amplifier in industrial systems that require sustained, high-power operation. It can be used with analogue or digital signals, and can provide power outputs of up to 400W. The BU900TP is also used in the control and regulation circuits in commercial and industrial environments. The transistor can be used for pulse-width modulation and other switching applications.
The working principle behind the BU900TP is the bipolar junction effect. This design enables the transistor to switch large loads quickly and accurately. When the Base-Emitter junction is forward biased, electrons are able to flow between the Base and the Emitter. This results in a current flowing through the collector and a voltage drop across the Base-Emitter junction. This voltage drop controls the flow of the current. The instantaneous current can be controlled by controlling the voltage applied to the Base-Emitter junction. The output current can also be regulated by changing the voltage applied to the collector.
The current gain of the BU900TP is a measure of its efficiency. It is the ratio of the collector current to the base current. A higher current gain leads to greater efficiency as less current is needed to drive the same amount of load. This makes the BU900TP ideal for use in high-current applications. The current gain also depends on the temperatures of both the collector and the base which can affect the operating characteristics of the transistor.
The BU900TP is a reliable and widely used BJT. It is capable of handling high currents and provides high current gain. It is suitable for a wide range of industrial and commercial applications, such as audio and power amplifiers, as well as pulse-width modulation and other switching applications. The transistor’s efficiency and performance are due to its ability to switch large loads quickly and accurately, as well as its high current gain. The reliability of the BU900TP makes it an excellent choice for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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