Allicdata Part #: | BULB39D-1-ND |
Manufacturer Part#: |
BULB39D-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 450V 4A D2PAK |
More Detail: | Bipolar (BJT) Transistor NPN 450V 4A 70W Surface ... |
DataSheet: | BULB39D-1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 450V |
Vce Saturation (Max) @ Ib, Ic: | 1.1V @ 500mA, 2.5A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 10mA, 5V |
Power - Max: | 70W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
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BULB39D-1 Transistors are bipolar semiconductor devices which are used in both digital and analog circuits. They are commonly used in applications such as amplification, switching, voltage regulation, oscillators and transmission. BULB39D-1 transistors are unique because they have a single base connection, a dual collector connection and a single emitter connection.
The BULB39D-1 is a silicon-based NPN bipolar transistor. It is available in a TO-39metal can package. The device features a power dissipation of 1 Watts and is designed for high-frequency amplification applications. The schematic symbol is presented in Figure 1 with the Base, Collector and Emitter connections clearly labeled.
The basic purpose of a transistor is to allow current to flow between two distinct points. A transistor amplifies the current flowing from its Base connection to its Collector connection. The transistor acts as a switch, when the Base-to-Emitter voltage is more than 0.7V, the transistor is said to be in the “on” state and allows current to pass through it. When the Base-to-Emitter voltage is less than 0.7V, the transistor is in the “off” state and does not allow current to pass through.
The BULB39D-1 has a maximum Collector-to-Emitter voltage of 33V, a maximum Collector-to-Base voltage of 40V, and a maximum Collector current of 1.0A. It has a maximum transition frequency of 150MHz and a range of current gain from 50 to 250. The Features of the BULB39D-1 are summarized in Table 1.
The BULB39D-1 transistors can be used in a wide range of applications, such as high-frequency amplifiers, oscillators, voltage regulators, and switching circuits. Its features make it suitable for applications that require high-speed switching, voltage regulation and low noise amplifiers. Additionally, its high current gain and power dissipation make it suitable for applications that need to be able to drive large loads. The BULB39D-1 can be used in automotive applications, such as power windows, signals and airbag control systems.
In conclusion, the BULB39D-1 transistor is a high-performance device, designed for a wide range of applications. Its features make it suitable for speed-switching, voltage-regulation and low-noise applications. It is an ideal choice for automotive applications, such as power windows and airbag control systems.
The specific data is subject to PDF, and the above content is for reference
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