Allicdata Part #: | BULB49DT4-ND |
Manufacturer Part#: |
BULB49DT4 |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANSISTOR HIGH VOLTAGE |
More Detail: | Bipolar (BJT) Transistor NPN 450V 5A 80W Surface ... |
DataSheet: | BULB49DT4 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.25468 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 450V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 800mA, 4A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 4 @ 7A, 10V |
Power - Max: | 80W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
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BULB49DT4 is a single bipolar junction transistor (BJT) which is designed to deliver high performance yet reliable operation. It has a wide variety of applications ranging from power control circuits and high frequency switching to automotive and industrial equipmentg.BULB49DT4 is capable of delivering high output power due to its low collector-emitter saturation voltage, meaning that this transistor is ideal for applications requiring low input power. Additionally, it is specially designed for use in high-frequency frequency switching applications since its high frequency gain characteristics make it particularly suitable for this purpose.In terms of operation, the BULB49DT4 works on the same principle as other types of BJTs. Its base-emitter terminals form a diode, allowing it to be forward biased when a voltage is applied between the base and the collector, and allowing current to flow from the base to the collector when the transistor is “on” due to the current amplification capabilities of the transistor.In this state, the small base current is normally amplified to a much higher collector current due to the increase in transconductance of the transistor, which is the measure of how its voltage amplification properties change with applied current. This makes the BULB49DT4 a very efficient device and allows it to produce low levels of electrical noise.Linked to this, the BULB49DT4 has an integrated emitter-follower, meaning that it is able to dissipate heat faster, increasing power efficiency and reliability. Lastly, its high-frequency gain characteristics make it suitable for applications such as amplifiers and high-frequency switching applications, while its rugged construction and low-voltage operation capability make it ideal for use in automotive and industrial applications.In summary, the BULB49DT4 is a single bipolar junction transistor designed to provide reliable, high-performance operation for a variety of applications. This transistor is specially designed for use in high-frequency switching applications, it has an integrated emitter-follower for improved heat dissipation, and its rugged construction enables it to withstand the harsh conditions which may be encountered in automotive and industrial equipment. As such, the BULB49DT4 is a very popular transistor for use in many different types of circuit.
The specific data is subject to PDF, and the above content is for reference
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