Allicdata Part #: | 497-12456-5-ND |
Manufacturer Part#: |
BULB742C-1 |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 400V 4A I2PAK |
More Detail: | Bipolar (BJT) Transistor NPN 400V 4A 70W Through ... |
DataSheet: | BULB742C-1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.00800 |
10 +: | $ 0.90279 |
100 +: | $ 0.72563 |
500 +: | $ 0.59618 |
1000 +: | $ 0.49398 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1A, 3.5A |
Current - Collector Cutoff (Max): | 250µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 800mA, 3V |
Power - Max: | 70W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BULB742C-1 is a single transistors bipolar junction transistor (BJT) which is specifically produced for the general purpose switching and amplifier circuit applications. The transistor comes in two different types, PNP and NPN, which enable it to be used in various biasing configurations.
The main features of the BULB742C-1 include low collector-emitter saturation voltage (0.15V max) at 10mA collector current, good current gain at -50V collector to emitter voltage, low Icbo of 2mA, minimal power dissipation, fast switching time and high collect-base breakdown voltage.
The BULB742C-1 can be used for various applications, including low power switched-mode amplifiers, general purpose switching and amplifier circuits, analog switches, integrated circuits, and audio amplifiers. The transistor also has a low power consumption, making it ideal for low power audio and signal processing applications, including strabismometer, remote control receivers, tristors, and other handheld electronic devices. The low power consumption and fast switching time of the BULB742C-1 make it an attractive choice for power sensitive applications.
The BULB742C-1 operates on the same working principle as other bipolar transistors, such as the PNP and NPN transistors. The transistor consists of two pn junctions, which act as a switch and a knob to control the current flow. When one of the junctions is forward biased, the electric current flows from the collector to the emitter, and when the other junction is forward biased, the electric current flows in the opposite direction, from the emitter to the collector. By controlling the amount of current being passed between the two junctions, the device can be used for switching and amplification.
In order to control the voltage, the circuit needs to be constructed with resistors. The resistors are responsible for setting the gain of the circuit, and the current flow between the two junctions depends on the voltage difference between the two. For example, when the collector to emitter voltage is high, the electric current will flow more quickly, and if the emitter to collector voltage is increased, the electric current will flow more slowly.
The BULB742C-1 is suitable for both high and low frequency applications, and it is also suitable for applications that require both fast switching times and low power consumption. Therefore, the BULB742C-1 is a versatile, low power, and cost effective solution for a wide range of switching and amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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