Allicdata Part #: | BULB903EDT4-ND |
Manufacturer Part#: |
BULB903EDT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN |
More Detail: | Bipolar (BJT) Transistor NPN |
DataSheet: | BULB903EDT4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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BULB903EDT4 is a type of single bipolar junction transistor (BJT) that can be found in a number of applications and electronics systems. Compared to many other BJTs, this type of transistor has an exceptionally low saturation voltage which makes it suitable for applications commonly requiring very low power consumption. In addition, BULB903EDT4 has a very low junction capacitance, which can be beneficial in high-speed circuits.
BULB903EDT4 is most commonly used in many types of analog and digital circuits, including amplifiers, oscillators, voltage regulators, and switching circuits. It is also used in communications systems, where its low power consumption and other benefits are especially important. The transistor is used in applications such as the manufacture of audio amplifiers, communication equipment, power supplies, and television sets, among other electronic systems. The low saturation voltage, low junction capacitance, and low power consumption of the BULB903EDT4 make it an appealing choice for many types of systems that require a high level of integration.
The working principle of BULB903EDT4 is simple and is based on the principle of semiconductor energy conduction. The transistor is composed of three layers of semiconductor material, each of which have their own conduction and resistance properties. When the transistor is in its “on” or “forward biased” state, electrons move from layer to layer, producing current flow. Conversely, when the transistor is in its “off” or “reverse biased” state, the electrons stop passing between the layers, in effect creating an open circuit.
The main benefit of BULB903EDT4 is its low power consumption. This allows the transistor to be used in a wide range of circuits and systems that require low power, such as those in portable devices and other electronic systems. Furthermore, the low junction capacitance and the low saturation voltage allow for high-speed switching and a wide range of functions.
The BULB903EDT4 is an ideal choice for a variety of applications in electronics and communication systems. Its low power consumption and low junction capacitance make it especially suitable for portable devices and systems that require a high level of integration. Furthermore, its low saturation voltage allows for high-speed switching and a wide range of functions. In addition, its reliability and durability mean it can be used in circuits that must operate for long periods of time without needing to be replaced.
The specific data is subject to PDF, and the above content is for reference
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