Allicdata Part #: | BY228GPHE3/54-ND |
Manufacturer Part#: |
BY228GPHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1.5KV 2.5A DO201 |
More Detail: | Diode Standard 1500V 2.5A Through Hole DO-201AD |
DataSheet: | BY228GPHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1500V |
Current - Average Rectified (Io): | 2.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.6V @ 2.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 20µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1500V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | BY228GP |
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The BY228GPHE3/54 is a single-phase silicon rectifier with an avalanche voltage of 45V and an off-state voltage rate of 41.6V RMS, making it a reliable device for low power applications. It also has a high diode breakdown voltage of up to 2kV, which make it one of the most efficient rectifier diodes currently available in the market. It has a wide operating temperature range from -25°C to 125°C, which makes it suitable for a variety of application fields.
The BY228GPHE3/54 rectifier is used in many fields due to its high-efficiency characteristics, reliability, cost-effectiveness and easy availability. It is primarily used in applications such as battery chargers, DC to DC converters, general-purpose power conversion, as well as in automotive, industrial, medical and telecom applications. It is also suitable for low-frequency inverters and other low-power switching applications.
The working principle of this rectifier is based on the voltage regulation it provides. When the device is in the forward conducting mode, it produces a voltage drop across its PN junction, which provides a measure of protection against high voltages. The device uses a PN junction diode as its main component, which is triggered by either a positive or negative external voltage. When the reverse voltage is applied, the diode allows the current to flow in one direction only and blocks it in the other direction. This enables the device to regulate the voltage of the applied signal by providing a predetermined amount of resistance.
It is also important to note that the BY228GPHE3/54 rectifier needs a heat sink in order to dissipate the heat generated during operation. This is due to the higher current ratings that it can handle, and the greater power handling capacity it has. Additionally, it is important to ensure that the power dissipation rating of the device is not exceeded as it could lead to possible device failure. It is also important to keep the environment around the device clean and dry in order to ensure that the device works properly.
The BY228GPHE3/54 rectifier is a very efficient, cost-effective and reliable device and is highly suited for a variety of applications. It is capable of handling higher current ratings and offers a high diode breakdown voltage, making it perfect for use in low power applications. Ultimately, its wide operating temperature range makes it suitable for long-term and continuous use in various environments.
The specific data is subject to PDF, and the above content is for reference
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BY229B-200HE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229B-400-E3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BY229B-400HE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BY229B-600-E3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-600HE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-800-E3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229B-800HE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY227MGPHE3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 1.25KV 2A ... |
BY229-200-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229-600-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229-600HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229-800-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229-800HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229B-200-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229B-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229B-400-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BY229B-400HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BY229B-600-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-600HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-800-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229B-800HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229X-200-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
BY229X-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
BY229X-400-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
BY229X-400HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
BY229X-600-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
BY229X-600HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
BY229X-800-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A IT... |
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