Allicdata Part #: | BY229B-200HE3/81-ND |
Manufacturer Part#: |
BY229B-200HE3/81 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 8A TO263AB |
More Detail: | Diode Standard 200V 8A Surface Mount TO-263AB |
DataSheet: | BY229B-200HE3/81 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.85V @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 145ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -40°C ~ 150°C |
Base Part Number: | BY229B-200 |
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Diode is a type of electrical components which only permit current to flow in one direction. The BY229B-200HE3/81 is a single-phase rectifier diode from Vishay Corporation. It has been developed to meet low cost and easy to install requirements of the market, offering numerous advantages over other kinds of diodes such as faster switching speeds, improved reliability, and longer life. This article examines the application field and working principles of BY229B-200HE3/81, and further explains the performance of this diode.
The BY229B-200HE3/81 is a single-phase with a 1A maximum continuous forward current of 200V. It has a 6A I2t limited rated avalanche energy and a peak repetitive reverse voltage of 200V. This makes it an ideal choice for use in rectification, switching, and energy management in AC/DC converter applications ranging from 12V to 18V.
The BY229B-200HE3/81 employs a simple rectifier configuration and has a right triangle appearance. The diode has an anode terminal near the bottom and a cathode terminal near the top. When a forward bias is applied, the anode terminal will become the positive terminal, and the cathode terminal will become the negative terminal. The diode will then be able to conduct current from the anode to the cathode, allowing for the electrons to be transferred across the junction.
The BY229B-200HE3/81 uses a silicon-based construction, which helps improve its electrical characteristics. The diode is able to switch faster than traditional silicon rectifier diodes and require less power to operate, resulting in improved system performance and power consumption. Additionally, the diode has an extended lifespan due to its long-term reliability. Its peak forward current and peak reverse current ratings are designed to meet the requirements of AC/DC converter applications.
The BY229B-200HE3/81 has a wide range of applications in electrical and electronic systems. It can be used as a rectifier diode, allowing for current to be transferred in one direction only. In addition, it can be used as a switching device, allowing for current to be transferred without the need for additional transistors or other devices. The diode can also be used as a voltage regulator, as it prevents excessive current from flowing through the circuit.
In summary, the BY229B-200HE3/81 is a single-phase rectifier diode from Vishay Corporation. It is a silicon-based diode which has a wide range of applications in electrical and electronic systems. The diode is capable of faster switching speeds and improved reliability, resulting in improved system performance and power consumption. The diode is able to meet the requirements of AC/DC converter applications and is suitable for use in rectification, switching, and energy management.
The specific data is subject to PDF, and the above content is for reference
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BY229B-400-E3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BY229B-400HE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BY229B-600-E3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-600HE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-800-E3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229B-800HE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
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BY229-200-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229-600-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229-600HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229-800-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229-800HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229B-200-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229B-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229B-400-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BY229B-400HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BY229B-600-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-600HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-800-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229B-800HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
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BY229X-400-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
BY229X-400HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
BY229X-600-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
BY229X-600HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
BY229X-800-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A IT... |
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