Allicdata Part #: | BY229B-600HE3/81-ND |
Manufacturer Part#: |
BY229B-600HE3/81 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 8A TO263AB |
More Detail: | Diode Standard 600V 8A Surface Mount TO-263AB |
DataSheet: | BY229B-600HE3/81 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.85V @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 145ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -40°C ~ 150°C |
Base Part Number: | BY229B-600 |
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BY229B-600HE3/81 is a single-phase, non-synchronous rectifier used mainly in low to medium power applications. The diode is made of a silicon wafer, usually mounted in a TO220, B2W2 or a TO-247RS package.
The device is designed for rectification in power supplies, converters, battery chargers and other devices used in military and industrial applications. It is rated for a forward voltage of up to 600V, can handle power dissipation of up to 2W and has a reverse leakage current of 10uA at 25°C.
The diode\'s application field primarily lies in the area of power electronics, where it is used for the conversion of alternating current (AC) to direct current (DC). It is mainly used for rectification of AC voltage to DC voltage, allowing the conversion from one form of electricity to another. The diode can be used for controlling the electricity by allowing or blocking the flow of current in either direction.
The working principle of this diode is based on a P-N Junction, a basic building block in modern semiconductor technology. When a P-N junction is exposed to electric fields, electrons in the negative ”N” region move to the positive ”P” region, creating a depletion region. This electric field creates a barrier which blocks the flow of current in the reverse direction. This allows current to flow in only one direction, depending upon the applied electric field.
The diode has a forward voltage drop that is usually slightly less than the peak voltage of the AC source, allowing the device to act as an AC to DC converter. This voltage drop results from the diode\'s resistance and capacitance, which affect the current flow through it. Furthermore, the diode has a low reverse recovery time, limiting the reverse current flow through the device and minimizing the production of harmonics.
In conclusion, a BY229B-600HE3/81 diode is a single-phase, non-synchronous rectifier used mainly in low to medium power applications and is rated up to 600V. It has a simple operating principle based on P-N junction, allowing the device to act as an AC-DC converter. Its various properties make it a suitable choice for power electronics, military and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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BY229B-400-E3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
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BY229B-600-E3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-600HE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-800-E3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229B-800HE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY227MGPHE3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 1.25KV 2A ... |
BY229-200-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229-600-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229-600HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229-800-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229-800HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229B-200-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229B-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BY229B-400-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BY229B-400HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BY229B-600-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-600HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BY229B-800-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229B-800HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
BY229X-200-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
BY229X-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
BY229X-400-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
BY229X-400HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
BY229X-600-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
BY229X-600HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
BY229X-800-E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A IT... |
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