Allicdata Part #: | BYG20JHM3_A/I-ND |
Manufacturer Part#: |
BYG20JHM3_A/I |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 600V 1.5A DO214 |
More Detail: | Diode Avalanche 600V 1.5A Surface Mount DO-214AC (... |
DataSheet: | BYG20JHM3_A/I Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.08484 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 1µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The diode is an essential and versatile component in modern electrical and electronics installations. Single-phase rectifier diodes, such as the BYG20JHM3_A/I, are the most commonly used rectifier diode and the most basic type of diode. In this article, we will be looking at the application field and working principle of the BYG20JHM3_A/I.
Single-phase rectifier diodes are used for a variety of applications, such as protection against overloads, in-rush current limiting, power rectification, reversing polarity, power conversion, and power conditioning. The BYG20JHM3_A/I is a high-current bidirectional diode, making it suitable for power rectification, power conversion, reversing polarity and protection against overloads. The diode has a very low voltage drop, which helps to minimize power losses.
The working principle of the BYG20JHM3_A/I is straightforward. It is a diode, which means that it behaves like a one-way valve, allowing current to flow only in one direction. In the forward bias condition, when a voltage is applied to the anode, the cathode acts as a collector, causing current to flow through the diode. In the reverse bias condition, the diode does not allow current to flow.
The BYG20JHM3_A/I is popular due to its low forward voltage drop and fast switching speed. It has a reverse recovery time of less than 200ns, which makes it suitable for high-speed applications. In addition, the diode has a low forward voltage drop, allowing it to be used in applications where low power loss is desired. The BYG20JHM3_A/I also features a very high maximum reverse current rating, making it suitable for applications where high currents are expected.
The BYG20JHM3_A/I is highly reliable, with a typical I2T rating of 2.0A2s2. It has a surge rating of 8A, which is suitable for most applications. The diode can also withstand up to 30V, making it suitable for a variety of applications.
Overall, the BYG20JHM3_A/I is an excellent choice for a variety of applications, from protecting against overloads to power conversion and reversing polarity. Its low voltage drop and fast switching speed make it suitable for high-speed applications, while its high maximum reverse current rating and I2T rating make it suitable for high-current applications. In addition, the diode is highly reliable, making it a great choice for any installation.
The specific data is subject to PDF, and the above content is for reference
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BYG23M-E3/TR3 | Vishay Semic... | -- | 150000 | DIODE AVALANCHE 1KV 1.5AD... |
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BYG22DHM3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG22DHE3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG24J-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG21M M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE AVALANCHE 1.5A DO21... |
BYG20D M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1.5A ... |
BYG20G M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
BYG20J M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1.5A ... |
BYG21MHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE AVALANCHE 1.5A DO21... |
BYG23M M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1.5A DO214... |
BYG23M R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1.5A DO214... |
BYG20G R3G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
BYG21MHR3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE AVALANCHE 1KV 1.5A ... |
BYG21M-E3/TR3 | Vishay Semic... | 0.08 $ | 15000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG20J-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG22D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG20D-E3/TR | Vishay Semic... | -- | 5400 | DIODE AVALANCHE 200V 1.5A... |
BYG22D-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG20G-E3/TR | Vishay Semic... | -- | 3600 | DIODE AVALANCHE 400V 1.5A... |
BYG20D-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
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BYG20J-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
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BYG24J-M3/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
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