Allicdata Part #: | BYG20J-M3/TR-ND |
Manufacturer Part#: |
BYG20J-M3/TR |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 600V 1.5A |
More Detail: | Diode Avalanche 600V 1.5A Surface Mount DO-214AC (... |
DataSheet: | BYG20J-M3/TR Datasheet/PDF |
Quantity: | 1000 |
14400 +: | $ 0.08216 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 1µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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BYG20J-M3/TR diodes are a type of rectifiers that are becoming increasingly popular in the electronics industry. They are typically used in the design and construction of small circuit boards and can be used in many other applications as well. These diodes offer an efficient, reliable solution for applications requiring isolated, power control and rectification.
The BYG20J-M3/TR diode is a planar diffused power MOSFET developed by Toshiba. It is a single-ended type MOSFET, meaning that the prime terminal is grounded and the other side is used for input. This type of MOSFET is widely used in various rectification applications due to its high efficiency and fast switching speed. The diode\'s advantages include low power dissipation, easy installation on board, and low on-resistance.
The BYG20J-M3/TR diode is widely used in power electronic applications where rectification and controlled power switching are required. Examples of such applications include LED lighting and control, power control and supply for audio systems or computers, automotive electronics, and various industrial applications. Generally, this type of diode is used for pulse width modulation (PWM) control, which means that the duty cycle of the pulse width is changed to control the average voltage. This type of diode can also be used in other power supply applications, such as overvoltage protection and motor speed control.
The BYG20J-M3/TR diode operates on the principle of rectification, which is the process of changing alternating current (AC) into direct current (DC). This is achieved by using a rectifier, which is a device that converts AC to DC. The BYG20J-M3/TR diode is a special type of rectifier, and consists of two layers that act as a reverse blocking shield. When the AC input is applied, only one layer allows the current to pass; the other is permanently blocked. This type of diode can be used in applications that require high current densities.
In addition to rectification applications, BYG20J-M3/TR diodes can also be used in signal and power control. For example, the diode can be used to switch on and off power to a device or appliance, and the pulse width modulation (PWM) signal can be used to control the operation of the device. This type of diode is particularly useful for high voltage applications, and it can also be used in low voltage applications, as long as the diode can handle the current.
In conclusion, the BYG20J-M3/TR diode is a type of single rectifier used for applications requiring isolated, power control and rectification. It operates on the principle of rectification, and can also be used in signal and power control applications. This type of diode is highly versatile and efficient, and is used in many different applications. As such, it is an invaluable tool both in industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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BYG20D R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 200V 1.5A ... |
BYG21M R3G | Taiwan Semic... | 0.07 $ | 3600 | DIODE AVALANCHE 1KV 1.5A ... |
BYG22A-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 50V 2A DO... |
BYG21K-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG22B-E3/TR | Vishay Semic... | 0.13 $ | 3600 | DIODE AVALANCHE 100V 2A D... |
BYG23M-E3/TR3 | Vishay Semic... | -- | 150000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG21M-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG23M-E3/TR | Vishay Semic... | -- | 55800 | DIODE AVALANCHE 1KV 1.5AD... |
BYG23T-M3/TR | Vishay Semic... | -- | 84600 | DIODE AVALANCHE 1300V 1A ... |
BYG22AHM3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 50V 2A DO... |
BYG22BHM3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 100V 2A D... |
BYG22DHM3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG22DHE3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG24J-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG21M M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE AVALANCHE 1.5A DO21... |
BYG20D M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1.5A ... |
BYG20G M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
BYG20J M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1.5A ... |
BYG21MHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE AVALANCHE 1.5A DO21... |
BYG23M M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1.5A DO214... |
BYG23M R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1.5A DO214... |
BYG20G R3G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
BYG21MHR3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE AVALANCHE 1KV 1.5A ... |
BYG21M-E3/TR3 | Vishay Semic... | 0.08 $ | 15000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG20J-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG22D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG20D-E3/TR | Vishay Semic... | -- | 5400 | DIODE AVALANCHE 200V 1.5A... |
BYG22D-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG20G-E3/TR | Vishay Semic... | -- | 3600 | DIODE AVALANCHE 400V 1.5A... |
BYG20D-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG20G-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG20J-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG21K-E3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG24D-M3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG24G-M3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG24J-M3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG24D-M3/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG24G-M3/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG24J-M3/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
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