Allicdata Part #: | BYG24J-M3/TR3-ND |
Manufacturer Part#: |
BYG24J-M3/TR3 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 600V 1.5A |
More Detail: | Diode Avalanche 600V 1.5A Surface Mount DO-214AC (... |
DataSheet: | BYG24J-M3/TR3 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.07108 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 140ns |
Current - Reverse Leakage @ Vr: | 1µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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BYG24J-M3/TR3 is a single, fast-recovery diode typically used in rectifier circuits, such as higher speed, higher current and higher voltage rectifier circuits. It is also used in AC switching power supplies, and in automotive and industrial applications. The BYG24J-M3/TR3 rectifier diode is based on a simple, yet reliable technology.
The major components of a single rectifier diode are the anode and cathode, which are connected together by a reverse biased junction. The junction is created by doping the regions of the diode material with impurities, which cause electrons and holes to be held on opposite sides of the junction. A free-flowing current will not be able to pass the junction until the proper voltage is applied.
When a positive voltage is applied to the anode, the electrons are repelled from the anode and begin to flow through the junction to the cathode. This establishes a forward-biased condition, which allows for current flow, and is called “forward conduction”. During this process, the diode acts as a conductor, conducting the current in only one direction. The forward conduction of the diode is a function of the specific material and design of the diode itself. Once the forward conduction begins, it can be maintained indefinitely, provided that the forward voltage applied to the diode is within its rated limits.
When the diode reaches a reverse-biased condition, the junction will not conduct any current. That is, until the reverse voltage is increased enough to overcome the built-in junction potential barrier and allow conduction. This process is called “reverse breakover” and its value is determined by the design of the diode. At the breakover voltage, the current will usually increase rapidly. In this condition, the diode acts as an insulator, preventing current from flowing in the reverse direction.
The BYG24J-M3/TR3 diode also features a special design element called a “fast-recovery” diode. This feature allows for a much faster turn-off when the reverse bias is removed. This speeds up the electronics in the circuit, allowing for faster turn-on and turn-off times and reducing power losses in the circuit.
As a single diode, the BYG24J-M3/TR3 can be used in numerous applications. It is most commonly used in power converters, transformer circuits, and rectifier circuits, where it is used to regulate the amount of current passing through the circuit. It can also be used in switching power supplies and computer-controlled systems, where it is used to control the flow of current. In these types of applications, the BYG24J-M3/TR3 will usually work in tandem with other devices, such as transistors, integrated circuits, and other components, in order to regulate and control power.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BYG20J R3G | Taiwan Semic... | -- | 1800 | DIODE GEN PURP 600V 1.5A ... |
BYG20D R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 200V 1.5A ... |
BYG21M R3G | Taiwan Semic... | 0.07 $ | 3600 | DIODE AVALANCHE 1KV 1.5A ... |
BYG22A-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 50V 2A DO... |
BYG21K-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG22B-E3/TR | Vishay Semic... | 0.13 $ | 3600 | DIODE AVALANCHE 100V 2A D... |
BYG23M-E3/TR3 | Vishay Semic... | -- | 150000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG21M-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG23M-E3/TR | Vishay Semic... | -- | 55800 | DIODE AVALANCHE 1KV 1.5AD... |
BYG23T-M3/TR | Vishay Semic... | -- | 84600 | DIODE AVALANCHE 1300V 1A ... |
BYG22AHM3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 50V 2A DO... |
BYG22BHM3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 100V 2A D... |
BYG22DHM3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG22DHE3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG24J-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG21M M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE AVALANCHE 1.5A DO21... |
BYG20D M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1.5A ... |
BYG20G M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
BYG20J M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1.5A ... |
BYG21MHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE AVALANCHE 1.5A DO21... |
BYG23M M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1.5A DO214... |
BYG23M R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1.5A DO214... |
BYG20G R3G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
BYG21MHR3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE AVALANCHE 1KV 1.5A ... |
BYG21M-E3/TR3 | Vishay Semic... | 0.08 $ | 15000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG20J-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG22D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG20D-E3/TR | Vishay Semic... | -- | 5400 | DIODE AVALANCHE 200V 1.5A... |
BYG22D-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG20G-E3/TR | Vishay Semic... | -- | 3600 | DIODE AVALANCHE 400V 1.5A... |
BYG20D-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG20G-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG20J-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG21K-E3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG24D-M3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG24G-M3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG24J-M3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG24D-M3/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG24G-M3/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG24J-M3/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
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