BYG22B-E3/TR3 Allicdata Electronics
Allicdata Part #:

BYG22B-E3/TR3-ND

Manufacturer Part#:

BYG22B-E3/TR3

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE AVALANCHE 100V 2A DO214AC
More Detail: Diode Avalanche 100V 2A Surface Mount DO-214AC (SM...
DataSheet: BYG22B-E3/TR3 datasheetBYG22B-E3/TR3 Datasheet/PDF
Quantity: 1000
7500 +: $ 0.10023
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BYG22B
Description

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BYG22B-E3/TR3 is a single rectifier diode that is used in various applications. It is specifically designed to be used in power supplies and general purpose rectification. It has an incredibly low leakage current and an incredibly high peak reverse voltage that makes it a very reliable device.

The BYG22B-E3/TR3 can handle up to 2 Amps of continuous current, which makes it perfect for use in a wide range of loads. Its reverse recovery time is also very fast, at less than 4 nanoseconds. It also features a low junction capacitance and positive temperature coefficient, which make it very suitable for use in high frequency systems.

The working principle behind the BYG22B-E3/TR3 is quite simple. It is composed of two layers of doped silicon, with a metal-insulator-metal barrier layer between them. The two layers of silicon are then connected. When a forward voltage is applied, the junction between the layers becomes a diode, meaning that it only allows current to flow from the anode to the cathode.

When a reverse voltage is applied, the barrier layer prevents current from flowing from the anode to the cathode. This stops any current from flowing, protecting the circuit from any damage due to inrush or back-emf protection. The high peak reverse voltage, as well as the low junction capacitance and positive temperature coefficient, help to make the BYG22B-E3/TR3 very reliable in a variety of applications.

The BYG22B-E3/TR3 is widely used in many applications, such as power supplies, general-purpose rectification, DC-DC converters, low-voltage systems, and more. It is also used in automotive applications, such as in DC-DC converters,, and in various consumer products, such as computers and mobile phones, audio and video systems, and more.

It is an incredibly reliable diode, and its features make it suitable for a wide range of uses. Its reliability and high peak reverse voltage make it an ideal choice for many applications. Its low junction capacitance and positive temperature coefficient ensure that the device is able to operate reliably in high-frequency systems.

The BYG22B-E3/TR3 is an incredibly reliable diode, and it is widely used in a variety of applications. Its low junction capacitance and positive temperature coefficient, as well as its high peak reverse voltage, ensure that it is suitable for use in a wide range of applications, including power supplies, general-purpose rectification, and DC-DC converters. Its positive temperature coefficient also helps to ensure that the device can operate reliably in high-frequency systems. Its reliable performance makes it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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