Allicdata Part #: | BZM55B3V6-TRGITR-ND |
Manufacturer Part#: |
BZM55B3V6-TR |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 500MW MICROMELF |
More Detail: | Zener Diode 3.6V 500mW Surface Mount MicroMELF |
DataSheet: | BZM55B3V6-TR Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.03043 |
5000 +: | $ 0.02646 |
12500 +: | $ 0.02249 |
25000 +: | $ 0.02117 |
62500 +: | $ 0.01985 |
125000 +: | $ 0.01764 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3.6V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 600 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, No Lead |
Supplier Device Package: | MicroMELF |
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A diode is an electrical device responsible for conducting an electrical current in one direction and blocking it in the other. Zener diodes are designed to break down at a particular voltage and allow a current to flow in both directions. The BZM55B3V6-TR is a single Zener diode, and its application field, characteristics, and working principle will be discussed in this article.
Application Field
The BZM55B3V6-TR is primarily used for voltage regulation, specifically for the purpose of clamping or protecting against transient voltages. It can also be used for phase control, dynamic braking, and high-voltage power supply circuits. It is made up of semiconductor materials such as both n- and p-type silicon.
Characteristics
The BZM55B3V6-TR has a low voltage rating of 3.6 volts and a power dissipation rate of 400 milliwatts. It is capable of handling high currents, up to 1 ampere. It has a forward electrode voltage of 1.25 volts and a reverse breakdown voltage of 3.6 volts. In addition, the doping concentration of the diode is reasonably low, allowing it to store a fair amount of charge.
Working Principle
The working principle of the BZM55B3V6-TR is fairly straightforward. When a voltage is applied to the anode, it then passes through the junction and draws electrons from the p-type material. This creates an excess of electrons on the n-side, which forms the basis of the electric current.
If the applied voltage exceeds the diode’s breakdown voltage, then the voltage across the junction begins to increase, subsequently allowing more current to pass through it. This current then reduces the surplus of electrons on the n-side which prevents further breakdown. The result is that the diode remains stable and prevents any further voltage fluctuations.
Conclusion
In conclusion, the BZM55B3V6-TR is a single Zener diode designed to break down at a particular voltage. It is primarily used for voltage regulation, specifically for the purpose of clamping or protecting against transient voltages. It has a low voltage rating of 3.6 volts and a forward electrode voltage of 1.25 volts. Its working principle is fairly straightforward; when the applied voltage exceeds its breakdown voltage, the voltage across the junction begins to increase, allowing more current to pass through it.
The specific data is subject to PDF, and the above content is for reference
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