Allicdata Part #: | BZM55C24-TRGITR-ND |
Manufacturer Part#: |
BZM55C24-TR |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 500MW MICROMELF |
More Detail: | Zener Diode 24V 500mW Surface Mount MicroMELF |
DataSheet: | BZM55C24-TR Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.02587 |
5000 +: | $ 0.02249 |
12500 +: | $ 0.01911 |
25000 +: | $ 0.01799 |
62500 +: | $ 0.01687 |
125000 +: | $ 0.01499 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 24V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 220 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 18V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, No Lead |
Supplier Device Package: | MicroMELF |
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BZM55C24-TR Application Field and Working Principle
The BZM55C24-TR is a 24Vd Zener diode based on PN junction. It is a bidirectional semiconductor electronic component that is designed to produce a voltage drop equal to the Zener voltage in the reverse-bias condition. It is mainly used for voltage stabilization, signal termination, signal switching, signal processing, surge protection, noise reduction and other applications.
Basic Structure and Working Principle
The BZM55C24-TR is a PN junction structure consisting of two regions - a N-type semiconductor layer and an opposite P-type semiconductor layer. These two layers are separated by a thin barrier layer, which is also known as a depletion layer. When the PN junction device is not activated, there is an electric field formed in the depletion layer, which prevents current conduction in the junction.
When a forward bias voltage is applied to the PN junction, holes are injected into the N-type region, while electrons are injected into the P-type region. This results in increased current conduction between the two layers and is known as forward biasing. The forward biasing of the PN junction device lowers the electric field in the depletion layer, and hence increases the current flow.
On the other hand, when a reverse bias voltage is applied to the PN junction, there is an increased electric field in the depletion layer that prevents the current from flowing. The reverse biasing of the PN junction device increases its resistance and the electric field prevents the current from flowing. This is known as reverse biasing of the PN junction.
When the reverse bias voltage is increased to the Zener voltage, the electric field in the depletion layer is reversed and current starts to flow in the PN junction in the reverse direction. This is known as Zener breakdown, and is used to maintain a constant voltage across the PN junction.
Application Fields
The BZM55C24-TR is mainly used in a wide range of applications, such as voltage stabilization, signal termination, signal switching, signal processing, surge protection, noise reduction, etc.
- Voltage Stabilization: The BZM55C24-TR is used for voltage stabilization applications. The Zener breakdown voltage of the device ensures a constant voltage condition even when the input voltage fluctuates. This is especially useful in power supply systems, where the output voltage has to be kept consistent even when the input voltage fluctuates.
- Signal Termination: The BZM55C24-TR can also be used as a signal terminator. It is an efficient device for connecting circuits to reduce low-frequency noise and reduce ringing in power line connections.
- Signal Switching: The BZM55C24-TR can be used for signal switching purposes. It can be used to control the direction of the current flow in a circuit. The device can also be used to switch between two different signals in a circuit, by changing the voltage between the two terminals.
- Signal Processing: The BZM55C24-TR is also used for signal processing applications. It can be employed to limit the maximum voltage level of signals as well as for impedance matching between different parts of the circuit.
- Surge Protection: The BZM55C24-TR is also used for surge protection purposes. It can protect sensitive electronics from power surges or spikes. The device helps to protect the device from excessive current and voltage, and prevents any possible damage to the circuit.
- Noise Reduction: The BZM55C24-TR is also used for noise reduction purpose. The device helps to reduce low frequency noise by dampening any oscillations in the circuit and reducing ringing in the power line. This is especially useful in automobile and electronics industries, where any form of interference can cause malfunction and/or damage to sensitive components.
Conclusion
The BZM55C24-TR is an efficient PN junction based diode with many applications in different electronic fields like voltage stabilization, signal termination, signal switching, signal processing, surge protection, noise reduction, etc. It works on the principle of Zener breakdown, which helps to maintain a constant voltage across the PN junction, even when the input voltage is fluctuating. It has a reverse breakdown voltage of 24Vd, and is a widely used component in power supplies and other circuits.
The specific data is subject to PDF, and the above content is for reference
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