Allicdata Part #: | BZM55B27-TR3-ND |
Manufacturer Part#: |
BZM55B27-TR3 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 500MW MICROMELF |
More Detail: | Zener Diode 27V 500mW Surface Mount MicroMELF |
DataSheet: | BZM55B27-TR3 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02249 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 27V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 220 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 20V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, No Lead |
Supplier Device Package: | MicroMELF |
Description
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Introduction
The BZM55B27-TR3 is a single Zener diode intended for a wide range of applications. It is a high power, cost-efficient, and reliable device designed to provide voltage regulation, over-voltage protection, and transient surge protection. The BZM55B27-TR3 has a reverse breakdown voltage of 27V and can be used in a variety of applications, including automotive, low power, industrial, radio frequency, and telecom applications.Construction and Working Principle
The BZM55B27-TR3 is constructed from a PNP element, which consists of a single junction between a heavily doped P-type and an N-type semiconductor. It is constructed from a metal oxide semiconductor film that is formed between two doped regions, creating the typical PN junction. The P-type region is known as the anode, while the N-type region is known as the cathode.When the cathode of the diode is connected to the anode, the PN junction shows a voltage value which is known as the Zener voltage. Under normal conditions, the reverse current flowing through the PN junction will be blocked and very small. However, when the voltage across the PN junction reaches the Zener voltage, the reverse current will increase sharply and become proportionately larger than the applied voltage.Applications
The BZM55B27-TR3 is typically used for voltage regulation, over-voltage protection, and transient surge protection. These applications are used in a variety of applications, such as automotive, low power, industrial, radio frequency, and telecom applications.In automotive applications, the BZM55B27-TR3 can be used to protect a vehicle’s electrical system from voltage spikes and surges caused by road conditions or by an accident. It can also be used to provide electrical stability during start-up, when the system may draw larger currents than normal. In this case, the diode will remain in its Zener breakdown voltage until the voltage drop across the diode is lower than its Zener voltage.In industrial applications, the BZM55B27-TR3 is used to provide voltage regulation and protection from over-voltage conditions. In this application, the diode will remain in its Zener breakdown voltage to provide the required protection from over-voltage conditions.In radio-frequency (RF) applications, the BZM55B27-TR3 is also used for protection from over-voltage conditions. In this application, the diode is actuated when the voltage across the PN junction reaches the Zener voltage. This provides protection from both reverse current and transient surges.In telecom applications, the BZM55B27-TR3 is also used for protection from voltage fluctuations and surges. By controlling the voltage across the diode, it prevents voltage fluctuations that can lead to signal interference, signal distortion, and damage to other equipment.Conclusion
The BZM55B27-TR3 is a single Zener diode designed for a wide range of applications, including automotive, low power, industrial, radio frequency, and telecom applications. It is constructed from a PNP element and can be used for voltage regulation, over-voltage protection, and transient surge protection. The BZM55B27-TR3 is an economical, high power and reliable device that offers protection from voltage spikes, over-voltage conditions, and transient surges.The specific data is subject to PDF, and the above content is for reference
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